SiC MOSFET与SiC SBD换流单元瞬态模型

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Abstract Compared with Si devices, the higher switching speed capability and lower on-state resistance of Silicon Carbide (SiC) devices increase the non-ideality and sensitivity to parasitic parameters of their switching transients. Thus, more accurate analytical transient modeling is required. In this paper, switching transients of power switching devices are simplified by time slicing, mechanism decoupling and nonlinear parameter decoupling, in order to highlight switching characteristics of switching transients while simplifying the analysis of their physical mechanisms. An analytical transient model of a commutation unit with SiC MOSFET and SiC SBD pair is proposed. Analytical calculation and experiment waveforms are compared. The results show that the proposed model is able to provide a relatively accurate prediction of switching transient waveforms and switching losses of SiC MOSFET. All the parameters in the proposed model can be extracted from datasheets, which enhances its feasibility.

Key words： SiC power devices transient model switching characteristics switching losses

Received: 09 April 2017 Published: 30 June 2017

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TM464

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	Articles by authors
	Zhu Yicheng
	Zhao Zhengming
	Wang Xudong
	Shi Bochen

Cite this article:

Zhu Yicheng,Zhao Zhengming,Wang Xudong等. Analytical Transient Model of Commutation Units with SiC MOSFET and SiC SBD Pair[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 58-69.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I12/58

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