Cascode型GaN HEMT输出伏安特性及其在单相逆变器中的应用研究

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Abstract In recent years with the rapid development of the manufacturing process of GaN devices, Gallium Nitride high electron mobility transistors (GaN HEMT) has begun to be applied in the field of power electronics. The appearance of the Cascode GaN HEMT makes it possible to apply GaN device in high voltage application. The output volt-ampere characteristics of the depletion mode GaN HEMT and Cascode GaN HEMT are investigated in detail, which is important for the operation mode of the Cascode GaN HEMT. This paper presents the steady-state operation mode for high voltage gallium nitride (GaN) high-electron-mobility transistors (HEMT) in a Cascode structure. The steady- state analysis is verified by a 500W single phase DC/AC inverter. Theoretical analysis is verified by simulation and experiment results.

Key words： Wide Bandgap Semiconductor Device GaN HEMT Cascode Output volt-ampere characteristics

Received: 10 September 2014 Published: 08 September 2015

PACS:

TM464

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	Articles by authors
	Li Yan
	Zhang Yajing
	Trillion Q. Zheng
	Huang Bo
	Guo Xizheng

Cite this article:

Li Yan,Zhang Yajing,Trillion Q. Zheng等. Research on Output Volt-ampere Characteristics of Cascode GaN HEMT and Its Application in Single-phase Inverter[J]. Transactions of China Electrotechnical Society, 2015, 30(14): 295-303.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2015/V30/I14/295

[1] S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, D. Ueda. Recent advances in gan power switching devices[C]. Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, 1-4.
[2] M.J., Jinzhu Li, Jin Wang. Applications of Gallium Nitride in power electronics[C]. Power and Energy Conference at Illinois (PECI), 2013, 1-7.
[3] Scott, M.J, Ke Zou, Inoa, E, Duarte, R., Yi Huang, Jin Wang. A Gallium Nitride switched-capacitor power inverter for photovoltaic applications[C]. Applied Power Electronics Conference and Exposition (APEC), 2012, 46-52.
[4] Scott, M.J., Ke Zou, Jin Wang, et al. A Gallium Nitride switched-capacitor circuit using synchronous rectification[J]. IEEE Transactions on Industry Applications, 2013, 49(3):1383-1391.
[5] Akira Nakajima, Kazuto Takao and Hiromichi Ohashi. GaN power transistor modeling for high-speed converter circuit design[J]. IEEE Transactions on Electron Devices. 2013, 60 (2): 646-651.
[6] Bo Yang, Fred C. Lee and Alpha J. Zhang. LLC resonant converter for front end DC/DC conversion [C]. IEEE APEC. 2002, 2: 1108-1112.
[7] 任小永,David Reusch,季澍,穆明凯,Fred C Lee.氮化镓功率晶体管三电平驱动技术[J].电工技术学报, 2013, 28(5): 202-207. Ren Xiaoyong, David Reusch, Ji Shu, Mu Mingkai, Fred C Lee. Three-level driving method for GaN power transistor[J]. Transaction of China Electro technical society, 2013, 28(5): 202-207.
[8] Delaine, Johan, Jeannin, Pierre-Olivier, Frey, David, Guepratte, Kevin, “Improvement of GaN transistors working conditions to increase efficiency of A 100W DC-DC converter,” Applied Power Electronics Conference and Exposition (APEC) 3, 656-66, 2013.
[9] Dong M, Elmes J, Peper M. Investigation on inherently safe gate drive techniques for normally-on wide bandgap power semiconductor switching devices[C]. Energy Conversion Congress and Exposition, 2009: 120-125.
[10] Ishibashi T, Okamoto M, Hiraki E. Resonant gate driver for normally-on GaN high-electron-mobility transistor[C]. ECCE Asia Downunder (ECCE Asia), 2013: 365-371.
[11] Liu Z, Huang X, Lee F C, Simulation model development and verification for high voltage GaN HEMT in Cascode structure[C]. Energy Conversion Congress and Exposition (ECCE), 2013: 3579-3586.
[12] Y. F. Wu, R. Coffie, N. A. Fichtenbaum, Y. Dora, C. S. Suh, L. I. B. Shen, P. A. Parikh, and U. K. Mishra, Total GaN solution to electrical power conversion[J]. In Proc. 69th Annu. DRC, Jun. 2011: 217-218.
[13] T. Morita, S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka,and D. Ueda, 99.3% efficiency of three-phase inverter for motor drive using GaN-base gate injection transistors[C]. Power Electron.Conf. Expo. 2011:481-484.
[14] Scott M J, Zou K, Wang J, et al. A gallium-nitride switched-capacitor circuit using synchronous rectification[C]. Energy Conversion Congress and Exposition (ECCE), 2011: 2501-2505.
[15] Huang X, Li Q, Liu Z, et al. Analytical loss model of high voltage GaN HEMT in cascode configuration[C]. Energy Conversion Congress and Exposition (ECCE), 2013: 3587-3594.
[16] IRF8707 器件手册[Z]. International Rectifier, 2008.
[17] TPH3006器件手册[Z]. Transphorm,2012.