星载1MHz GaN LLC变换器低反向导通损耗控制

doi:10.19595/j.cnki.1000-6753.tces.220780

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Abstract GaN devices typically have a reverse voltage drop above 1.8V, and the reverse conduction loss of the GaN device on the primary switch exceeds 15% in a 1MHz LLC converter. A low reverse conduction loss control is proposed to reduce the reverse conduction loss in the primary switch of the GaN-based 1MHz LLC resonance converter. The basic idea of the proposed control is to shorten the reverse conduction time of the primary switch on the premise of ensuring zero voltage switching (ZVS). The output capacitance discharge model is built to calculate the dead time and determine the turn-on instant of the primary switch. A 400W 1MHz GaN-based LLC converter with radiation-hardened GaN devices is built to verify the proposed dead time control. Compared with the fixed dead time strategy, the loss of the primary switch is decreased by 32% under 10% load and 16% under full load, respectively.

Key words： GaN satellite application reverse conduction loss LLC converter dead-time

Received: 14 May 2022

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TM461

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	Articles by authors
	Yang Yong
	Song Dawei
	Gu Zhanbiao
	Xu Senfeng
	Zhang Zhiliang

Cite this article:

Yang Yong,Song Dawei,Gu Zhanbiao等. Low Reverse Conduction Loss Control for 1MHz GaN-Based LLC Converter Used in Satellite Application[J]. Transactions of China Electrotechnical Society, 2022, 37(24): 6183-6190.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.220780 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I24/6183

[1] 周荔丹, 闫朝鑫, 姚钢, 等. 空间辐射环境对航天器分布式电力系统关键部件的影响及应对策略[J]. 电工技术学报, 2022, 37(6): 1365-1380.
Zhou Lidan, Yan Chaoxin, Yao Gang, et al.Influence of space radiation environment on critical components of spacecraft distributed power system and counter- measures[J]. Transactions of China Electrotechnical Society, 2022, 37(6): 1365-1380.
[2] Zhang Zhiliang, He Binghui, Hu Dongdong, et al.Multi-winding configuration optimization of multi- output planar transformers in GaN active forward converters for satellite applications[J]. IEEE Transa- ctions on Power Electronics, 2019, 34(5): 4465-4479.
[3] 任小永, David Reusch, 季澍, 等. 氮化镓功率晶体管三电平驱动技术[J]. 电工技术学报, 2013, 28(5): 202-207.
Ren Xiaoyong, David Reusch, Ji Shu, et al.Three- level driving method for GaN power transistor[J]. Transactions of China Electrotechnical Society, 2013, 28(5): 202-207.
[4] Zhu Xinyi, Li Haoran, Zhang Zhiliang, et al.A sensorless model-based digital driving scheme for synchronous rectification in 1-kV input 1-MHz GaN LLC converters[J]. IEEE Transactions on Power Electronics, 2021, 36(7): 8359-8369.
[5] Ren Ren, Liu Bo, Jones E A, et al.Accurate ZVS boundary in high switching frequency LLC con- verter[C]//2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, 2017: 1-6.
[6] Li Haoran, Wang Shengdong, Zhang Zhiliang, et al.Bidirectional synchronous rectification on-line calcu- lation control for high voltage applications in SiC bidirectional LLC portable chargers[J]. IEEE Transa- ctions on Power Electronics, 2021, 36(5): 5557-5568.
[7] Crisafulli V, Gutierrez D, Fazio. Efficiency maximi- zation for half-bridge LC converter through automatic dead time tuning[C]//PCIM Europe 2016, Inter- national Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016: 1-8.
[8] Hsu J D, Ordonez M, Eberle W, et al.LLC syn- chronous rectification using resonant capacitor voltage[J]. IEEE Transactions on Power Electronics, 2019, 34(11): 10970-10987.
[9] Beiranvand R, Rashidian B, Zolghadri M R, et al.Optimizing the normalized dead-time and maximum switching frequency of a wide-adjustable-range LLC resonant converter[J]. IEEE Transactions on Power Electronics, 2011, 26(2): 462-472.
[10] Wei Yuqi, Luo Quanming, Wang Zhiqing, et al.Simple and effective adaptive deadtime strategies for LLC resonant converter: analysis, design, and imple- mentation[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2022, 10(2): 1548-1562.
[11] Qin Wei, Zhang Le, Wu Xinke.Re-examination of ZVS condition for MHz LLC converter operating at resonant frequency[C]//2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC), Shenzhen, China, 2018: 1-4.
[12] Kasper M, Burkart R M, Deboy G, et al.ZVS of power MOSFETs revisited[J]. IEEE Transactions on Power Electronics, 2016, 31(12): 8063-8067.
[13] Wen Hao, Gong Jinwu, Zhao Xiaonan, et al.Analysis of diode reverse recovery effect on ZVS condition for GaN-based LLC resonant converter[J]. IEEE Transa- ctions on Power Electronics, 2019, 34(12): 11952-11963.
[14] 焦健, 郭希铮, 游小杰, 等. LLC谐振变换器的改进型电流解析方法[J]. 电工技术学报, 2021, 36(23): 5002-5013.
Jiao Jian, Guo Xizheng, You Xiaojie, et al.An improved current analytical method for LLC resonant converter[J]. Transactions of China Electrotechnical Society, 2021, 36(23): 5002-5013.
[15] 童军, 吴伟东, 李发成, 等. 基于GaN器件的高频高效LLC谐振变换器[J]. 电工技术学报, 2021, 36(增刊2): 635-643.
Tong Jun, Wu Weidong, Li Facheng, et al.High frequency and high efficiency LLC resonant con- verter[J]. Transactions of China Electrotechnical Society, 2021, 36(S2): 635-643.