基于量化电压并行比较的IGBT状态监测保护电路

doi:10.19595/j.cnki.1000-6753.tces.L90451

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Abstract The high-power insulated gate bipolar transistor (IGBT) module is a key component in the medium-high voltage and large-capacity power electronic converter system, while the existing gate driver is a critical factor influencing the performance of the IGBT module and converter system. Literature about the reliability of IGBT revealed that the condition monitoring and protection by gate drivers for the random failure and wear-out failure is currently the only way to achieve the fastest fault diagnosis on packaged IGBT modules at a low cost. Hence, this paper presents the condition monitoring and protection circuit based on parallel comparison of quantized voltages. Firstly, this paper analyzes the parasitic parameters' effects on saturated on-state voltage drop V_ce(sat), short-circuit current I_sc, turn-on delay time t_don and gate peak current I_gpeak using the equivalent circuit of high-power IGBT module. Based on the variation range under different aging degrees, the life cycle safe operating area is established to provide a basis for quantized voltage setting. Then, taking V_ce(sat) and t_don as the detection signals, the proposed monitoring circuit and control scheme are introduced. The detection signals are quantized by setting several specific thresholds, and the multiple-comparator circuit's logic output signals are used to judge short-circuit faults and degradation degree of the IGBT module in real time. Finally, the feasibility and correctness of the proposed method are verified by Pspice simulation.

Key words： Condition monitoring quantized voltage life cycle safe operating area gate driver

Received: 11 July 2020

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TM46

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	Articles by authors
	Huang Xianjin
	Li Xin
	Liu Yixin
	Wang Fengchuan
	Gao Guangang

Cite this article:

Huang Xianjin,Li Xin,Liu Yixin等. Condition Monitoring and Protection Circuit for IGBTs Based on Parallel Comparison Methods of Quantized Voltages[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2535-2547.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90451 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I12/2535

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