桥式电路中不同封装SiC MOSFET串扰问题分析及低栅极关断阻抗的驱动电路

doi:10.19595/j.cnki.1000-6753.tces.L70527

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Abstract Because of higher switching speed of SiC MOSFET, crosstalk in a phase-leg configuration will be more serious. It will hinder the increase of switching frequency and reduce the reliability of power electronic equipment. This paper analyzes the crosstalk mechanisms of non-Kelvin package and Kelvin package, respectively. During the turn-on transition and turn-off transition of a switch, the displacement current of the gate-drain capacitor and the drop voltages on the common source inductors can induce the gate-source voltage variation of the off-state switch. Then, this paper proposes a new gate driver for suppressing crosstalk, which creates the low turn-off gate impedance. The operating principle and the parameters design are also analyzed. Finally, the crosstalk problems in non-Kelvin package and Kelvin package are tested by experiments. The experimental results of the proposed driver prove the effect of crosstalk suppression.

Key words： Crosstalk SiC MOSFET driver circuit common source inductors

Published: 10 October 2017

PACS:	TM133
	TN34

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	Articles by authors
	Liang Mei
	Li Yan
	Zheng Trillion Q
	Zhao Hongyan

Cite this article:

Liang Mei,Li Yan,Zheng Trillion Q等. Analysis for Crosstalk of SiC MOSFET with Different Packages in a Phase-Leg Configuration and a Low Gate Turn-Off Impedance Driver[J]. Transactions of China Electrotechnical Society, 2017, 32(18): 162-174.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L70527 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I18/162

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