功率模块封装键合线的通流能力：模型与实证

doi:10.19595/j.cnki.1000-6753.tces.212008

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Abstract Compared with the Si counterpart, the SiC power device performs higher current density, junction-case thermal resistance and junction temperature, smaller footprint size, active bonding area and parallel bonding wires. Therefore, the electro-thermal stress of the bonding wire increases dramatically, which challenges the safety and reliability of the SiC power module. The ampacity of bonding wire of the next-generation power packaging is urgently pursued. From the aspects of current density and junction temperature, the obstacles of bonding wire for SiC power module packaging are clarified. Taking the continuous or pulsed load current into account, insightful mathematical models are established to characterize the ampacity of single and parallel bonding wires. By using bonding wires with different diameters, the simulated and experimental results are presented to ensure the effectiveness and validation of the proposed models. The ampacity degradation effect of parallel bonding wires is modeled and examined. This paper can provide guidance for the optimal design of bonding wire for the SiC power module.

Key words： SiC power module wire-bonding packaging ampacity of bonding wire model and experiment

Received: 10 December 2021

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TM131.2

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	Ai Shengxiang
	Zeng Zheng
	Wang Liang
	Sun Peng
	Zhang Jiawei

Cite this article:

Ai Shengxiang,Zeng Zheng,Wang Liang等. Ampacity of Bonding Wire for Power Module Packaging: Model and Experiment[J]. Transactions of China Electrotechnical Society, 2022, 37(20): 5227-5240.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.212008 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I20/5227

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