驱动回路参数对碳化硅MOSFET开关瞬态过程的影响

doi:10.19595/j.cnki.1000-6753.tces.170389

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Abstract The switching behavior of Silicon Carbide (SiC) MOSFETs is susceptible to the parasitic elements in the system. It manifests non-ideal characteristics of the power pulses, and further limits the system reliability and efficiency. The relationship among the control pulse, the drive pulse and the power pulse is analyzed. Two parameters dv/dt and di/dt are extracted as two critical factors affecting the switching behavior of SiC MOSFETs. The impacts of the gate-loop parameters on dv/dt and di/dt are analyzed theoretically and verified through PSpice simulation and experiments. Furthermore, several transient control methods based on the gate-loop parameters are compared, as a guideline for the control of the switching behavior of SiC MOSFETs in real applications.

Key words： SiC MOSFET pulse parasitic parameters switching behavior

Received: 05 April 2017 Published: 19 July 2017

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TM131.2

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	Articles by authors
	Wang Xudong
	Zhu Yicheng
	Zhao Zhengming
	Chen Kainan

Cite this article:

Wang Xudong,Zhu Yicheng,Zhao Zhengming等. Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs[J]. Transactions of China Electrotechnical Society, 2017, 32(13): 23-30.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.170389 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I13/23

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