IGBT电力电子系统小时间尺度动态性能分析与计算的电磁场-电路耦合模型

doi:10.19595/j.cnki.1000-6753.tces.170594

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Abstract To consider the effect of the displacement current and the skin effect of the electromagnetic phenomenon as well the stray parameters in a small time scale electromagnetic transient, which are not properly muddled in the existing model, a coupled 3D finite element-circuit model of an IGBT based power electronics device for its transient performance computation in small and extreme small time scales is developed and an iterative solution methodology is proposed. In order to describe the skin effect and displacement current, a three-dimensional (3D) finite element model of IGBT is developed; In order to model the influence of stray parameters, a high-order distributed circuit model of the whole power electronics system is proposed, and the numerical method for stray parameters computation is included. From the analysis of the internal electromagnetic transient process of an IGBT, an improved IGBT circuit model is proposed. In order to balance the accuracy and the computational cost of the high order circuit model of a complete power electronics system, a reduction method is proposed. The comparisons between the simulated and tested results evidence the feasibilities and merits of the proposed work.

Key words： Insulated gate bipolar transistor (IGBT) stray parameters finite element model order- reduction displacement current

Received: 08 May 2017 Published: 19 July 2017

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TM464

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	Articles by authors
	Ma Yuhan
	Chen Jiajia
	Hu Sideng
	Yang Shiyou

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Ma Yuhan,Chen Jiajia,Hu Sideng等. A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device[J]. Transactions of China Electrotechnical Society, 2017, 32(13): 14-22.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.170594 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I13/14

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