Research on High Power Density Silicon Carbide Motor Controller Based on Parallel Connection of Discrete Devices
Zhang Shaokun1,2, Sun Wei1,2, Fan Tao1,2, Wen Xuhui1,2, Zhang Dong1,2
1. Institute of Electrical Engineering of Chinese Academy of Sciences, Beijing 100190, China;
2. Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
The motor controllers for new energy vehicles are generally realized by high-power module, but the high-power module is generally high in cost, large in volume and limited in resources. This article proposes a high power density motor controller based on the parallel design of SiC MOSFET discrete devices, which maximizes material and space utilization from the perspectives of electrical and heat dissipation.
In order to achieve high power density, in the design of electronic system structure, three circular circuit boards with a minimum diameter of only 72mm, consisting of an upper and lower three-layer structure, were used to design the control circuit, driving circuit, and power circuit. The whole system has a circular structure, and uses the Kelvin source of SiC MOSFET to separate the power circuit from the drive circuit. The power circuit uses the power source, which is located on the power board. The drive circuit uses the Kelvin source, which is located on the drive board. In addition to helping to prevent the interference of the high-voltage side transient signal on the grid voltage feedback, reducing the dynamic loss, it is also conducive to achieving the symmetrical layout of the parallel tube power circuit to the drive circuit.
In the circuit design, in order to realize parallel current sharing, take into account the area, power, heat dissipation and other factors, the method of using magnetic components to balance the impedance characteristics of the circuit is selected, and a high anti-interference driving circuit that can dynamic equilibrium the current of parallel MOSFETs is proposed. A calculated impedance ferrite magnetic bead is connected in series behind the on and off resistors of each SiC MOSFET tube, ensuring that the parallel equivalent impedance is the same while also suppressing ringing caused by rapid switching in the SiC MOSFET gate circuit. In addition, the series connection of source resistance and ferrite bead is added to the Kelvin source pole, which can further synchronize the gate signal and realize current sharing. The anti crosstalk circuit designed using source resistance achieves dual use of one resistor, enhancing the circuit's anti-interference performance.
A new design of PCB stacked busbar suitable for parallel application of discrete devices has been achieved, focusing on the goals of low parasitic inductance, high current, and high heat dissipation. Starting from high power density, the busbar realizes the integrated design of parallel MOSFET tubes, current sensors, discharge resistors, DC capacitors, and AC/DC terminals. A low noise PCB busbar with multiple sets of stacked PCBs is designed based on the principle that when the opposite direction of current in the vertical direction has the smallest parasitic inductance on the smallest loop area and adjacent circuits have opposite current directions, the inductance will decrease with the increase of the number of circuits. The top and bottom layers of the busbar both have metal windows for DC and AC wiring, which can weld irregularly shaped metal sheets or strips of different thicknesses to expand the current, meet the requirements of carrying maximum current while also providing good heat dissipation, achieving long-term operation with a maximum peak current of 120A.
The silicon carbide motor controller developed based on the above research results has undergone dual pulse and power experiments. The results show that the designed discrete device parallel controller can achieve a maximum efficiency of 99.5% and a power density of 60kW/L at the highest bus voltage of 600V, and can be applied to new energy vehicle systems.
张少昆, 孙微, 范涛, 温旭辉, 张栋. 基于分立器件并联的高功率密度碳化硅电机控制器研究[J]. 电工技术学报, 0, (): 9025-25.
Zhang Shaokun, Sun Wei, Fan Tao, Wen Xuhui, Zhang Dong. Research on High Power Density Silicon Carbide Motor Controller Based on Parallel Connection of Discrete Devices. Transactions of China Electrotechnical Society, 0, (): 9025-25.
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