Low Reverse Conduction Loss Control for 1MHz GaN-Based LLC Converter Used in Satellite Application
Yang Yong1, Song Dawei1, Gu Zhanbiao2, Xu Senfeng2, Zhang Zhiliang1
1. Aero-Power Sci-Tech Center Nanjing University of Aeronautics and Astronautics Nanjing 210016 China; 2. Hebei Semiconductor Research Institute Shijiazhuang 050051 China
Abstract：GaN devices typically have a reverse voltage drop above 1.8V, and the reverse conduction loss of the GaN device on the primary switch exceeds 15% in a 1MHz LLC converter. A low reverse conduction loss control is proposed to reduce the reverse conduction loss in the primary switch of the GaN-based 1MHz LLC resonance converter. The basic idea of the proposed control is to shorten the reverse conduction time of the primary switch on the premise of ensuring zero voltage switching (ZVS). The output capacitance discharge model is built to calculate the dead time and determine the turn-on instant of the primary switch. A 400W 1MHz GaN-based LLC converter with radiation-hardened GaN devices is built to verify the proposed dead time control. Compared with the fixed dead time strategy, the loss of the primary switch is decreased by 32% under 10% load and 16% under full load, respectively.
杨勇, 宋大威, 顾占彪, 徐森锋, 张之梁. 星载1MHz GaN LLC变换器低反向导通损耗控制[J]. 电工技术学报, 2022, 37(24): 6183-6190.
Yang Yong, Song Dawei, Gu Zhanbiao, Xu Senfeng, Zhang Zhiliang. Low Reverse Conduction Loss Control for 1MHz GaN-Based LLC Converter Used in Satellite Application. Transactions of China Electrotechnical Society, 2022, 37(24): 6183-6190.
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