Abstract：A resonant gate driver for SiC MOSFET is proposed in this paper. The proposed gate driver uses LC resonant network to recover the energy stored in the gate capacitor of the SiC MOSFET. Then the driving losses can be reduced. The operation principle of the resonant gate driver is analyzed in detail and main waveforms under different modes are given. At the same time, the design principle of the resonant gate driver is introduced and the driving losses of the resonant gate driver are analyzed. Finally, the simulation model and experimental platform of the resonant gate driver are built. The results show that the proposed resonant gate driver has quite good performance. The driving loss is reduced to 0.258W at 1MHz switching frequency, which improves the efficiency of the gate driver.
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2020, Vol. 35 
