Abstract：To assess the effects of loop and package parasitic parameters on silicon carbide MOSFET switching transient characterization, switching transient equivalent circuit model was firstly established under all the parasitic parameters, and the turn-on and turn-off transient process was analyzed in detail. Then, considering the negative bias voltage and the nonlinearity of device parasitic capacitance, simplified analytic expression of switching transient electric overstress was deduced. Furthermore, the relationship between oscillation frequency and parasitic parameters was also discussed, based on the small signal equivalent circuit. Eventually, the experimental and calculation results show that the analysis model is feasible and can reflect the influence of parasitic parameters on silicon carbide MOSFET switching characteristics.
柯俊吉, 赵志斌, 谢宗奎, 徐鹏, 崔翔. 考虑寄生参数影响的碳化硅MOSFET开关暂态分析模型[J]. 电工技术学报, 2018, 33(8): 1762-1774.
Ke Junji, Zhao Zhibin, Xie Zongkui, Xu Peng, Cui Xiang. Analytical Switching Transient Model for Silicon Carbide MOSFET under the Influence of Parasitic Parameters. Transactions of China Electrotechnical Society, 2018, 33(8): 1762-1774.
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2018, Vol. 33 
