Abstract：The insulated gate bipolar transistor has been extensively used in all kinds of power electronics devices, but for a long time, the absence of effective methods for its parameters extraction limited the employment of simulator models, which also restricted the development of device application level. This paper compares the planar gate structure with the trench gate structure of IGBT, and carries on theoretic analysis and formulary derivation based on its work principle and semiconductor physics. According to the flaws of existing ways, a series of new parameter extraction methods for gate parameters is proposed. The results of extraction experiments under different working condition show good consistency, which also proves the accuracy of proposed extraction methods.
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2009, Vol. 24 
