Abstract:In order to study the improvement of the double-base region structure with buffer layer on the power diode’s reverse recovery characteristics, the influences of the buffer layer thickness and the surface concentration on the diode reverse recovery time, softness factor, and forward voltage drop are quantitatively discussed. The double-base region structure model satisfying the necessary conditions is established. The model simulation results show that the softness factor and the reverse recovery time can both be increased through decreasing the thickness or adding the surface concentration of the buffer layer, which is caused by the influence of the concentration gradient of the buffer layer. According to the project requirements, the reverse recovery time (trr) is less than 250ns, the reverse blocking voltage (VB) is greater than 1 000V and the forward voltage drop (VF) is less than 1V. The optimum buffer layer thickness and surface concentration level are 70μm and 1×1017cm-3, respectively. The soft recovery characteristics of the diode with the double-base region structure are demonstrated by prototyping and feature detection experiments.
王建, 梁琳, 李有康, 李晓明, 余岳辉. 双基区结构快速软恢复二极管特性研究[J]. 电工技术学报, 2015, 30(18): 1-7.
Wang Jian, Liang Lin, Li Youkang, Li Xiaoming, Yu Yuehui. Investigation of the Characteristics of Fast Soft Recovery Diode with Double-Base Region Structure. Transactions of China Electrotechnical Society, 2015, 30(18): 1-7.
[1] Lutz J, Baburske R, Chen M, et al. The nn + -junction as the key to improved ruggedness and soft recovery of power diode[J]. IEEE Transactions on Electronic Devices, 2009, 56(11): 2825-2832. [2] 陈威, 戎萍, 张伟, 等. DC-DC变流器整流二极管零电流软关断方法[J]. 中国电机工程学报, 2010, 30(15): 24-31. Chen Wei, Rong Ping, Zhang Wei, et al. Method of zero current turn-off technique for rectifier diode in DC-DC converters[J]. Proceedings of the CSEE, 2010, 30(15): 24-31. [3] 易荣, 赵争鸣, 袁立强. 高压大容量变换器中快恢复二极管的模型[J]. 电工技术学报, 2008, 23(7): 63-80. Yi Rong, Zhao Zhengming, Yuan Liqiang. Fast recovery diode model for circuit simulation of high voltage high power three level converters[J]. Transactions of China Electrotechnical Society, 2008, 23(7): 63-80. [4] Humbel O, Galster N, Dalibor T, et al. Why is fast recovery diode plasma-engineering with ion-irradiation superior to that with emitter efficiency reduction[J]. IEEE Transactions on Power Electronics, 2003, 18(1): 23-29. [5] 李方正, 徐勤富, 赖建军, 等. PiN 二极管的一种改进型PSpice模型[J]. 电工技术学报, 2011, 26(1): 172-176. Li Fangzheng, Xu Qinfu, Lai Jianjun, et al. An improved power PiN diode model for PSpice[J]. Transactions of China Electrotechnical Society, 2011, 26(1): 172-176. [6] Domeij M, Lutz J, Silber D. On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche[J]. IEEE Transaction on Electron Devices, 2003, 50(2): 486-493. [7] 马丽, 高勇. 半超结SiGe高压快速软恢复开关二极管[J]. 物理学报, 2009, 58 (1): 529-535. Ma Li, Gao Yong. Semi-super junction SiGe high voltage fast and soft recovery switching diodes[J]. Acta Physica Sinica, 2009, 58 (1): 529-535. [8] 陈曦, 王瑾, 肖岚. 用于高压高频整流的二极管串联均压问题[J]. 电工技术学报, 2012, 27 (10): 208-214. Chen Xi, Wang Jin, Xiao Lan. Research on the voltage sharing in series coupled diodes for high voltage and high frequency rectifier applications[J]. Transactions of China Electrotechnical Society, 2012, 27 (10): 208-214. [9] Rahimo M T, Shammas N Y A. Freewheeling diode reverse-recovery failure modes in IGBT applications[J]. IEEE Transactions on Industry Applications, 2001, 37(2): 661-670. [10] 王振民, 张芩, 薛家祥, 等. 快速功率二极管正反向恢复特性仿真研究[J]. 电力电子技术, 2007, 41(5): 92-94. Wang Zhenmin, Zhang Cen, Xue Jiaxiang, et al. A simulation research on the forward and reverse recovery characteristics[J]. Power Electronics, 2007, 41(5): 92-94. [11] 凌晨, 葛宝明, 毕大强. 配电网中的电力电子变压器研究[J]. 电力系统保护与控制, 2012, 40(2): 35-39. Ling Chen, Ge Baoming, Bi Daqiang. A power electronic transformer applied to distribution system[J]. Power System Protection and Control, 2012, 40(2): 35-39. [12] Baburske R, Heinze B, Lutz J, et al. Charge-carrier plasma dynamics during the reverse-recovery period in p + -n - -n + diodes[J]. IEEE Transaction on Electron Device, 2008, 55(8): 2164-2172. [13] 陈曦, 田敬民, 李守智. 快速软恢复二极管局域寿命控制数值分析[J]. 电力电子技术, 2002, 36(6): 70-72. Chen Xi, Tian Jingmin, Li Shouzhi. Numerical analysis of local lifetime control for fast soft recovery diode[J]. Power Electronics, 2002, 36(6): 70-72. [14] Vobecký J, Hazdra P. High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum[J]. IEEE Electron Device Letters, 2002, 23(7): 392-394. [15] 高金辉, 唐静, 贾利锋. 太阳能电池参数求解新算法[J]. 电力系统保护与控制, 2012, 40(9): 134-136. Gao Jinhui, Tang Jing, Jia Lifeng. A novel parameter extraction method for solar cells[J]. Power System Protection and Control, 2012, 40(9): 134-136. [16] Vobeckyy J, Hazdra P, Zaahlava V. Helium irradiated high-power P-i-N diode with low on-state voltage drop[J]. Solid-State Electronics, 2003, 47(1): 45-50. [17] Felsl H P, Heinze B, Lutz J. Effects of different buffer structures on the avalanche behaviour of high voltage diodes under high reverse current conditions[J]. IEE Proceedings of Circuits Devices System, 2006, 153(1): 11-15. [18] Schlangenotto H, Serafin J, Sawitzki F, et al. Improved recovery of fast power diodes with self- adjusting pemitter efficiency[J]. IEEE Electron Device Letters, 1989, 10(7): 322-324. [19] 张斌. 快恢复二极管发展与现状[J]. 电力电子技术, 2010, 34(1): 20-23. Zhang Bin. The reviews and status of fast recovery diodes[J]. Power Electronics, 2010, 34(1): 20-23. [20] 张海涛, 张斌, 王均平. 采用缓冲层结构的软恢复二极管研究[J]. 电力电子技术, 2003, 37(2): 79-81. Zhang Haitao, Zhang Bin, Wang Junping. Study of soft recovery diode with buffering base region by the diffusion[J]. Power Electronics, 2003, 37(2): 79-81.