电工技术学报  2019, Vol. 34 Issue (3): 506-515    DOI: 10.19595/j.cnki.1000-6753.tces.180097
电力电子 |
一种基于集总电荷的大功率PIN二极管改进电路模型
李鑫1, 罗毅飞1, 段耀强2, 刘宾礼1, 黄永乐1
1. 海军工程大学舰船综合电力技术国防科技重点实验室 武汉 430033;
2.华中科技大学电气与电子工程学院 武汉 430074
An Improved Lumped-Charge Circuit Model for High Power PIN Diode
LiXin1, Luo Yifei1, Duan Yaoqiang2, Liu Binli1, Huang Yongle1
1. National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China;
2. School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
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摘要 提出了一种基于集总电荷建模方法的大功率PIN二极管改进电路模型。传统的集总电荷模型使用有效载流子寿命模型,未考虑载流子寿命和基区电荷浓度之间的关系,导致模型的仿真精度偏低。该文在研究传统PIN二极管集总电荷模型的基础上,首先分析了二极管基区载流子寿命随注入浓度和温度的变化规律,并提出了载流子寿命随浓度和温度变化的集总电荷模型。然后,基于提出的载流子寿命模型建立了改进的PIN二极管集总电荷电路模型,并加入模型物理参数的温度函数,实现了模型对不同温度下PIN二极管通态和瞬态特性的表征,并在PSPICE仿真平台中实现了该模型。最后,用1700V/1000A IGBT模块中反并联续流二极管对模型进行了实验,仿真和实验结果对比验证了该模型的准确性。
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李鑫
罗毅飞
段耀强
刘宾礼
黄永乐
Abstract:This paper presents an improved circuit model of high power PIN diode based on lumped-charge model. The traditional lumped-charge model has a relatively poor simulation accuracy by using the effective excess carrier lifetime model without considering the relationship between carrier lifetime and injection charge concentration. Firstly, the traditional modelling method of PIN diode was studied. The variation of carrier lifetime with the injection concentration and temperature was discussed. Then,the influence of them was added to the proposed lumped-charge model. Considering the operation of PIN diode is changed with temperatures, the temperature function of the physical parameters in the model was given to get the static and transient temperature characteristics. The model was implemented into circuit simulation platform PSPICE. Finally, the anti-parallel free-wheeling diode in the 1 700 V/1 000 A IGBT module was used for experiments. The comparisons between the simulated and measured characteristics verify the accuracy of the model.
Key wordsPIN diode    lumped-charge model    temperature characteristics    excess carrier lifetime   
收稿日期: 2018-01-08      出版日期: 2019-01-31
PACS: TM464  
基金资助:国家自然科学基金(51490681)和国家重点基础研究发展计划(973计划)(2015CB251004)资助
通讯作者: 段耀强,男,1989年生,博士研究生,研究方向为电力电子装置控制及建模。E-mail:744840092@qq.com   
作者简介: 李鑫男,1993年生,硕士研究生,研究方向为电力电子器件建模与可靠性分析。E-mail:l.x04@mail.scut.edu.cn
引用本文:   
李鑫, 罗毅飞, 段耀强, 刘宾礼, 黄永乐. 一种基于集总电荷的大功率PIN二极管改进电路模型[J]. 电工技术学报, 2019, 34(3): 506-515. LiXin, Luo Yifei, Duan Yaoqiang, Liu Binli, Huang Yongle. An Improved Lumped-Charge Circuit Model for High Power PIN Diode. Transactions of China Electrotechnical Society, 2019, 34(3): 506-515.
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