An Improved Lumped-Charge Circuit Model for High Power PIN Diode
LiXin1, Luo Yifei1, Duan Yaoqiang2, Liu Binli1, Huang Yongle1
1. National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China; 2. School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
Abstract:This paper presents an improved circuit model of high power PIN diode based on lumped-charge model. The traditional lumped-charge model has a relatively poor simulation accuracy by using the effective excess carrier lifetime model without considering the relationship between carrier lifetime and injection charge concentration. Firstly, the traditional modelling method of PIN diode was studied. The variation of carrier lifetime with the injection concentration and temperature was discussed. Then,the influence of them was added to the proposed lumped-charge model. Considering the operation of PIN diode is changed with temperatures, the temperature function of the physical parameters in the model was given to get the static and transient temperature characteristics. The model was implemented into circuit simulation platform PSPICE. Finally, the anti-parallel free-wheeling diode in the 1 700 V/1 000 A IGBT module was used for experiments. The comparisons between the simulated and measured characteristics verify the accuracy of the model.
李鑫, 罗毅飞, 段耀强, 刘宾礼, 黄永乐. 一种基于集总电荷的大功率PIN二极管改进电路模型[J]. 电工技术学报, 2019, 34(3): 506-515.
LiXin, Luo Yifei, Duan Yaoqiang, Liu Binli, Huang Yongle. An Improved Lumped-Charge Circuit Model for High Power PIN Diode. Transactions of China Electrotechnical Society, 2019, 34(3): 506-515.
[1] 唐勇. 大容量特种高性能电力电子系统中器件模型理论研究[D]. 武汉: 海军工程大学, 2010. [2] 方波, 白政民, 张元敏. 基于FB-PS-PWM软开关技术的光伏发电MPPT研究[J]. 电力系统保护与控制, 2011, 39(6): 71-75, 79. Fang Bo, BaiZhengmin, ZhangYuanmin. Research of MPPT in PV system based on FB-PS-PWM ZVS soft-switching technology[J]. Power System Protection and Control, 2011, 39(6): 71-75, 79. [3] 张明锐, 蒋利明, 欧阳丽. 局部阴影条件下光伏阵列旁路二极管和阻塞二极管的影响和作用[J]. 电气技术, 2017, 18(8): 1-5. Zhang Mingrui, Jiang Liming, Ouyang Li.Theinfluences and effects of photovoltaic array’s bypass diode and string diode under partially shaded conditions[J]. Electrical Engineering, 2017, 18(8): 1-5. [4] LuoYifei, Xiao Fei, Wang Bo, et al. A voltage model of p-i-n diodes at reverse recovery under short-time freewheeling[J]. IEEE Transactions on Power Electronics, 2017, 32(1): 142-149. [5] 刘建华, 郎金荣, 周卫平. 高性能场终止寿命控制FRD芯片工艺研究[J]. 集成电路应用, 2017, 34(8): 45-50. Liu Jianhua, Lang Jinrong, Zhou Weiping.Fabrication of high performance field-stop andcarrier-lifetime-control fast recovery diodes[J]. Application of IC, 2017, 34(8): 45-50. [6] 张佳佳, 叶尚斌, 张逸成, 等. 基于拉氏变换的变温度PIN二极管动态建模[J]. 电工技术学报, 2016, 31(1): 139-146. Zhang Jiajia, Ye Shangbin, Zhang Yicheng.et al.Temperature-variable dynamic modeling of PIN diode based on laplace transform[J]. Transactions of China Electrotechnical Society, 2016, 31(1): 139-146. [7] 汪波, 罗毅飞, 刘宾礼, 等. 沟槽栅场终止型IGBT瞬态数学模型[J]. 电工技术学报, 2017, 32(12): 50-57. Wang Bo, LuoYifei, Liu Binli. et al. Transient mathematical model of trench field-stop IGBT[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 50-57. [8] Bellini M, Vobecky J.TCAD simulations of irradiated power diodes over a wide temperature range[C]//International Conference on Simulation of Semiconductor Processes and Devices, California, San Diego, 2011: 183-186. [9] BaligaBJ. 功率半导体器件基础[M].北京: 电子工业出版社, 2013. [10] Strollo A G M. A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation[J]. IEEE Transactions on Power Electronics, 1997, 12(1): 12-20. [11] Shaker A, Abouelatta M, El-Banna M, et al.Full electrothermal physically-based modeling of the power diode using PSPICE[J]. Solid-State Electronics, 2016, 116(10): 70-79. [12] Ma C L, Lauritzen P O.A simple power diode model with forward and reverse recovery[J]. IEEE Transactions on Power Electronics, 1993, 8(4): 342-346. [13] 王润岑, 张佳佳, 叶尚斌, 等. 基于集总电荷的PIN二极管反向恢复模型[J]. 低电压电器, 2013(10): 30-33, 47. WangRuncen, ZhangJiajia, YeShangbin, et al. PIN diode model with reverse recovery based on lumped charge[J]. Low Voltage Apparatus, 2013(10): 30-33, 47. [14] Ma C L, Lauritzen P O, Sigg J.Modeling of power diodes with the lumped-charge modeling technique[J]. IEEE Transactions on Power Electronics, 1997, 12(3): 398-405. [15] Bellini M, Stevanovic I, Prada D.Improved lumped charge model for high voltage power diode and automated extraction procedure[C]//Bipolar/Bicmos Circuits and Technology Meeting, Atlanta, GA, 2011: 49-52. [16] Jankovic N, Pesic T, Igic P.All injection level power PIN diode model including temperature dependence[J]. Solid-State Electronics, 2007, 51(5): 719-725. [17] 陈思哲,盛况.4700V碳化硅PiN整流二极管[J].电工技术学报,2015,30(22):57-61. Chen Sizhe, Sheng Kuang.4700V SiCPiNrectifier[J]. Transactions of China Electrotechnical Society, 2015,30(22):57-61. [18] 唐轶, 王扬, 赵红璐, 等. STATCOM主回路开关器件故障诊断[J]. 电力系统保护与控制, 2017, 45(19): 55-62. Tang Yi, Wang Yang, ZhaoHonglu, et al. Fault diagnosis of main circuit switching device in STATCOM[J]. Power System Protection and Control, 2017, 45(19): 55-62. [19] 陆佳政, 吴传平, 李波, 等. 直流融冰装置拓扑结构的比较研究[J]. 电力系统保护与控制, 2014, 42(13): 83-88. Lu Jiazheng, Wu Chuanping, Li Bo, et al.Comparative research on topology of DC de-icing equipment[J]. Power System Protection and Control, 2017, 42(13): 83-88. [20] JosefLutz.功率半导体器件——原理、特性和可靠性[M].北京:机械工业出版社, 2015. [21] 方春恩, 李威, 李先敏, 等. PIN型功率二极管动态特性物理模型参数提取[J]. 电工技术学报, 2015, 30(6): 208-215. Fang Chunen, Li Wei, Li Xianmin, et al.PIN power diode dynamic behavior and physics-based modelparameter extraction method[J]. Transactions of China Electrotechnical Society, 2015, 30(6): 208-215. [22] Schmidt J.Temperature and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors[J]. Applied Physics Letters, 2003, 82(13): 2178-2180.