Design and Implementation of SiC Motor Drive Controller with High Environmental Temperature and High Power Density
Zheng Dan, Wen Xuhui, Fan Tao, Ning Puqi, Zhang Dong
Key Laboratory of High Density Electromagnetic Power and Systems Chinese Academy of Sciences Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 China
Abstract：This paper presents a comprehensive design methodology for a silicon carbide (SiC) power controller capable of high-temperature operation (105℃ ambient), high power density, and exceptional reliability. Building upon existing SiC controller design experience (85℃ ambient temperature, 37.1 kW/L power density), the design and optimization were conducted in three key areas: automated system layout optimization, compact electromagnetic compatibility (EMC) filters, and an active thermal management system based on junction temperature monitoring. These advancements reduced the overall size of the SiC controller while simultaneously enhancing both high-temperature performance and operational reliability. An automated system layout optimization was developed with a focus on three critical components-power modules, DC-link capacitors, and busbars-which were found to collectively account for more than 50% of the controller's total volume. First, a sequence-pair model was established to characterize chip placement and orientation, followed by the definition of a fitness evaluation function for power modules. An artificial neural network (ANN)-based optimization algorithm was then implemented, resulting in the development of a highly compact 1 200 V/600 A SiC power module. Next, conventional two-dimensional (2D) layout rules were extended to a three-dimensional (3D) component arrangement strategy. A 3D escape-line technique was adopted to successfully address interconnection challenges in complex spatial configurations. Through these innovations, a significant reduction in power component dimensions was achieved without compromising electrical performance or thermal coupling effects. To address the dual EMC challenges arising from SiC's fast switching speeds and variable frequency operation, a hybrid active-passive filter solution was adopted to ensure harmonic suppression while smaller size. The active filter section, incorporating current sampling, current feedback, feedforward regulationand analog control, improved low-frequency interference insertion loss by approximately 10 dB. Compared to traditional passive filter solutions, the hybrid approach reduced total volume by 17%. For reliable high-temperature operation, this paper first proposes a MOSFET junction temperature monitoring method based on third-quadrant body diode forward voltage. This method overcame the limitations of conventional on-state voltage monitoring approaches, which typically exhibit insufficient temperature sensitivity at low currents and are susceptible to positive bias temperature instability (PBTI). Building upon the existing controller functions, a highly multiplexed high-resolution junction temperature sampling circuit was designed, achieving high-precision online junction temperature (TJ) monitoring across the entire operating range. Using the TJ as feedback, a TJ closed-loop control system based on switching frequency regulation was implemented. Simulation results demonstrate that, compared with conventional fixed switching frequency solutions, the proposed approach increases peak power by 20% without compromising reliability. Through integration of these three key technologies, a 105℃ambient-tolerant SiC controller prototype was successfully developed. Experimental validation demonstrated a peak power output of 127 kW, power density of 47.8 kW/L, maximum room-temperature efficiency of 99.85%, and full compliance with GB/T 18655 Class 3 EMC standards across the entire operational envelope.
郑丹, 温旭辉, 范涛, 宁圃奇, 张栋. 高环境温度高功率密度SiC电机驱动控制器设计与实现[J]. 电工技术学报, 2025, 40(15): 4889-4904.
Zheng Dan, Wen Xuhui, Fan Tao, Ning Puqi, Zhang Dong. Design and Implementation of SiC Motor Drive Controller with High Environmental Temperature and High Power Density. Transactions of China Electrotechnical Society, 2025, 40(15): 4889-4904.
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