电工技术学报  2022, Vol. 37 Issue (18): 4664-4675    DOI: 10.19595/j.cnki.1000-6753.tces.211710
电力电子 |
GaN器件动态导通电阻精确测试与影响因素分析
赵方玮, 李艳, 魏超, 张楠, 郑妍璇
北京交通大学电气工程学院 北京 100044
Accurate Measurement of Dynamic on-Resistance of GaN Devices and Affecting Factor Analysis
Zhao Fangwei, Li Yan, Wei Chao, Zhang Nan, Zheng Yanxuan
School of Electrical Engineering Beijing Jiaotong University Beijing 100044 China
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摘要 GaN器件较传统Si器件具有耐高压、耐高温、导通电阻小和开关损耗小等优势,但其特有的动态导通电阻现象是限制其大规模应用的主要问题。该文基于动态导通电阻影响机理分析,首先提出一种GaN器件动态导通电阻综合测试平台及测试方法;然后测试了三款同电压/电流等级、不同结构GaN器件在各影响因素下的动态导通电阻,分析影响因素占比及动态导通电阻变化规律,与机理分析进行对比验证;最后从器件应用角度给出动态导通电阻优化方法。该文提出的测试平台测试变量基本涵盖实际应用中的全部动态导通电阻影响因素。实验表明,不同结构GaN器件动态导通电阻特性不同,且占主导的动态导通电阻影响因素不同。从应用层面优化动态导通电阻,可有效降低通态损耗。
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赵方玮
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关键词 GaN器件电流崩塌效应动态导通电阻精确测试优化应用方法    
Abstract:Compared with traditional Si devices, GaN devices have the advantages of high voltage and high temperature resistance, small on-resistance and low switching loss. However, the dynamic on-resistance of GaN devices has become the main reliability problem that limits their large-scale application. Based on the affecting factor analysis of the dynamic on-resistance, this paper proposes a comprehensive test platform and test method. The dynamic on-resistance under several affecting factors of three GaN devices with same voltage/current level and different structures is tested. The proportion of affecting factors and the change of dynamic on-resistance are analyzed. The mechanism analysis is verified by being compared with experimental results. Finally, the application methods of GaN devices with low dynamic on-resistance are given. The proposed test platform covers most of the affecting factors of dynamic on-resistance in practical applications. The experimental results show that the dynamic on-resistance characteristics and the dominant affecting factors are different with different device structures. Optimizing the dynamic on-resistance from the application level can effectively reduce the conduction loss.
Key wordsGaN devices    current collapse effect    dynamic on-resistance    accurate test    optimized application method   
收稿日期: 2021-10-28     
PACS: TM46  
  TN30  
基金资助:国家自然科学基金面上资助项目(51877007)
通讯作者: 李 艳 女,1977年生,教授,博士生导师,研究方向为电力电子高频变换器、宽禁带半导体器件应用。E-mail: liyan@bjtu.edu.cn   
作者简介: 赵方玮 女,1995年生,博士研究生,研究方向为GaN功率器件精确测试及应用。E-mail: zhaofangwei@bjtu.edu.cn
引用本文:   
赵方玮, 李艳, 魏超, 张楠, 郑妍璇. GaN器件动态导通电阻精确测试与影响因素分析[J]. 电工技术学报, 2022, 37(18): 4664-4675. Zhao Fangwei, Li Yan, Wei Chao, Zhang Nan, Zheng Yanxuan. Accurate Measurement of Dynamic on-Resistance of GaN Devices and Affecting Factor Analysis. Transactions of China Electrotechnical Society, 2022, 37(18): 4664-4675.
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