Abstract：Due to the influence of internal parasitic parameters and junction capacitance, silicon carbide (SiC) power devices have great voltage and current overshoot and high-frequency switching oscillation in the process of high-speed switching, which seriously affects the operation reliability of SiC-based converters. In this paper, firstly, switching characteristics of SiC MOSFET are deeply analyzed to reveal the mathematical relationship between gate driving current and voltage and current overshoot. Then, a new active gate drive circuit with variable driving current is proposed. The gate current is actively regulated in the current or voltage rising stage of the switching process to suppress voltage and current overshoot and oscillation through the direct detection and feedback of the transient drain current change rate dId/dt, drain-source voltage change rate dVds/dt and driving voltage of SiC MOSFET Vgs. Finally, experimental results show that the proposed method can effectively reduce voltage and current overshoot by 30%~50%, suppress the oscillation and electromagnetic interference, and improve the operation reliability of SiC MOSFET converter.
刘平, 陈梓健, 苗轶如, 杨江涛, 李伟. 基于开关瞬态反馈的SiC MOSFET有源驱动电路[J]. 电工技术学报, 2022, 37(17): 4446-4457.
Liu Ping, Chen Zijian, Miao Yiru, Yang Jiangtao, Li Wei. Active Gate Driver for SiC MOSFET Based on Switching Transient Feedback. Transactions of China Electrotechnical Society, 2022, 37(17): 4446-4457.
[1] Zhao Shuang, Zhao Xingchen, Dearien A, et al.An intelligent versatile model-based trajectory-optimized active gate driver for silicon carbide devices[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 429-441. [2] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16): 3453-3459. Zhang Jianzhong, Wu Haifu, Zhang Yaqian, et al.A resonant gate driver for SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2020, 35(16): 3453-3459. [3] 余宝伟, 郭希铮, 部旭聪, 等. 全碳化硅辅助变流器功率回路振荡问题[J]. 电工技术学报, 2021, 36(增刊2): 619-626. Yu Baowei, Guo Xizheng, Bu Xucong, et al.Oscillation of power circuit of full SiC auxiliary converter[J]. Transactions of China Electrotechnical Society, 2021, 36(S2): 619-626. [4] 冯超, 李虹, 蒋艳锋, 等. 抑制瞬态电压电流尖峰和振荡的电流注入型SiC MOSFET有源驱动方法研究[J]. 中国电机工程学报, 2019, 39(19): 5666-5673, 5894. Feng Chao, Li Hong, Jiang Yanfeng, et al.Research on current injection active drive method of SiC MOSFET with transient voltage and current spike and oscillation suppression[J]. Proceedings of the CSEE, 2019, 39(19): 5666-5673, 5894. [5] Zhao Shuang, Dearien A, Wu Yuheng, et al.Adaptive multi-level active gate drivers for SiC power devices[J]. IEEE Transactions on Power Electronics, 2020, 35(2): 1882-1898. [6] Chen Hao, Divan D.High speed switching issues of high power rated silicon-carbide devices and the mitigation methods[C]//2015 IEEE Energy Conversion Congress and Exposition (ECCE), Montreal, QC, Canada, 2015: 2254-2260. [7] Nayak P, Hatua K.Active gate driving technique for a 1200 V SiC MOSFET to minimize detrimental effects of parasitic inductance in the converter layout[J]. IEEE Transactions on Industry Applications, 2018, 54(2): 1622-1633. [8] 王宁, 张建忠. 基于开关轨迹优化的SiC MOSFET有源驱动电路研究综述[J]. 电工技术学报, 2022, 37(10): 2523-2537. Wang Ning, Zhang Jianzhong.Review of active gate driver for SiC MOSFET with switching trajectory optimization[J]. Transactions of China Electrotechnical Society, 2022, 37(10): 2523-2537. [9] 邵天骢, 郑琼林, 李志君, 等. 基于干扰动态响应机理的SiC MOSFET驱动设计[J]. 电工技术学报, 2021, 36(20): 4204-4214. Shao Tiancong, Zheng Trillion Q, Li Zhijun, et al.SiC MOSFET gate driver design based on interference dynamic response mechanism[J]. Transactions of China Electrotechnical Society, 2021, 36(20): 4204-4214. [10] 李辉, 廖兴林, 肖洪伟, 等. 基于SiC MOSFET直流固态断路器关断初期电压尖峰抑制方法[J]. 电工技术学报, 2018, 33(5): 1058-1067. Li Hui, Liao Xinglin, Xiao Hongwei, et al.Voltage overshoot suppression method of SiC MOSFET-based DC solid-state circuit breaker at turn-off initial stage[J]. Transactions of China Electrotechnical Society, 2018, 33(5): 1058-1067. [11] Liang Mei, Li Yan, Chen Qian, et al.Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application[C]//2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017: 1358-1365. [12] Regnat G, Jeannin P O, Frey D, et al.Optimized power modules for silicon carbide mosfet[J]. IEEE Transactions on Industry Applications, 2018, 54(2): 1634-1644. [13] 柯俊吉, 赵志斌, 谢宗奎, 等. 考虑寄生参数影响的碳化硅MOSFET开关暂态分析模型[J]. 电工技术学报, 2018, 33(8): 1762-1774. Ke Junji, Zhao Zhibin, Xie Zongkui, et al.Analytical switching transient model for silicon carbide MOSFET under the influence of parasitic parameters[J]. Transactions of China Electrotechnical Society, 2018, 33(8): 1762-1774. [14] 刘平, 李海鹏, 苗轶如, 等. 基于驱动电流动态调节的低过冲低损耗SiC MOSFET有源门极驱动[J]. 中国电机工程学报, 2020, 40(18): 5730-5741. Liu Ping, Li Haipeng, Miao Yiru, et al.Low overshoot and low loss active gate driver for SiC MOSFET based on driving current dynamic regulation[J]. Proceedings of the CSEE, 2020, 40(18): 5730-5741. [15] Camacho A P, Sala V, Ghorbani H, et al.A novel active gate driver for improving SiC MOSFET switching trajectory[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11): 9032-9042. [16] Yamaguchi K, Katsura K, Yamada T, et al.Comprehensive evaluation of gate boost driver for SiC-MOSFETs[C]//2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016: 1-8. [17] Yang Yuan, Wen Yang, Gao Yong.A novel active gate driver for improving switching performance of high-power SiC MOSFET modules[J]. IEEE Transactions on Power Electronics, 2019, 34(8): 7775-7787. [18] Wen Yang, Yang Yuan, Gao Yong.Active gate driver for improving current sharing performance of paralleled high-power SiC MOSFET modules[J]. IEEE Transactions on Power Electronics, 2021, 36(2): 1491-1505. [19] Sukhatme Y, Miryala V K, Ganesan P, et al.Digitally controlled gate current source-based active gate driver for silicon carbide MOSFETs[J]. IEEE Transactions on Industrial Electronics, 2020, 67(12): 10121-10133. [20] Dymond H C P, Liu Dawei, Wang Jianjing, et al. Multi-level active gate driver for SiC MOSFETs[C]// 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017: 5107-5112. [21] Vamshi K M, Hatua K.Current controlled active gate driver for 1200V SiC MOSFET[C]//2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India, 2016: 1-6. [22] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665. Wang Lina, Ma Haobo, Yuan Kai, et al.Modeling and influencing factor analysis of SiC MOSFET half-bridge circuit switching transient overcurrent and overvoltage[J]. Transactions of China Electrotechnical Society, 2020, 35(17): 3652-3665. [23] 王旭东, 朱义诚, 赵争鸣, 等. 驱动回路参数对碳化硅MOSFET开关瞬态过程的影响[J]. 电工技术学报, 2017, 32(13): 23-30. Wang Xudong, Zhu Yicheng, Zhao Zhengming, et al.Impact of gate-loop parameters on the switching behavior of SiC MOSFETs[J]. Transactions of China Electrotechnical Society, 2017, 32(13): 23-30. [24] 朱义诚, 赵争鸣, 王旭东, 等. SiC MOSFET与SiC SBD换流单元瞬态模型[J]. 电工技术学报, 2017, 32(12): 58-69. Zhu Yicheng, Zhao Zhengming, Wang Xudong, et al.Analytical transient model of commutation units with SiC MOSFET and SiC SBD pair[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 58-69.
2022, Vol. 37 
