Abstract：Based on the full set of semiconductor device equations, a 2-dimension numerical model of RSD (reversely switched dynistor) is set up in a cell structure with finite difference method to obtain a better understanding of RSD. Included in the model are the physical mechanisms such as carrier-carrier scattering, SRH and Auger recombination, impact ionization and so on. Besides, Circuit model triggered by resonant method is built upon the parameters extracted from experiment conditions. Together with the circuit model, the devices model is calculated by program written in Matlab with Runge-Kutta and Newton iterative method to obtain the distribution of carries and the waveform of current and voltage. Based on the comparison between the result of calculation and experiment, validity of the model is analyzed and explanation of error is given. The pre-charge process is also analyzed with the help of concentrations of carriers and current density derived from the simulation. Significant Auger recombination and withdraw current during the pre-charge process diminish the quantity of plasma injected by the pre-charge current, which demonstrate that the current integral during the pre-charge process can not represent the whole quantity of pre-charge.
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2012, Vol. 27 
