Abstract：Experimental research on semi-insulating (SI) GaAs photoconductive switches with electrode gap 3mm and 8mm found out that surface flashover and filamention are two main damaged mechanisms. Surface flashover is a phenomena that GaAs material takes on melting-recrystallization in the course of heat transfer under strong bias voltage, and it would lead to a fatal injury to switch. Because of negative differential conductivity (NDC) effect, high concentration of electron-hole plasma channel would form filamention under nonlinear mode; the chip is in photo-controlled pre-breakdown state. There are two kind of resumable and unresumable injures.
马湘蓉, 施卫, 薛红, 纪卫莉. 沿面闪络和丝状电流对光电导开关的损伤机理[J]. 电工技术学报, 2010, 25(10): 129-135.
Ma Xiangrong, Shi Wei, Xue Hong, Ji Weili. Injuring Mechanism of Surface Flashover and Filamention to the Photoconductive Switch. Transactions of China Electrotechnical Society, 2010, 25(10): 129-135.
[1] 袁建强, 谢卫平, 周良骥, 等. 光导开关研究进展及其在脉冲功率技术中的应用[J]. 强激光与粒子束, 2008, 20(1): 171-176. [2] Islam N E, Schamiloglu E, Fledderman C B. Characterization of semi-insulating CaAs photoconductive semiconductor switch for ultra-wide band high power microwave applications[J]. Appl. Phys. Lett., 1998, 73(14): 1988. [3] 施卫, 田立强. 半绝缘GaAs光电导开关的击穿特性[J].半导体学报, 2004, 25(6): 691-696. [4] Adams J C, Falk R A, Capps C D, et al. Characterization of current filamention in GaAs photocon- ductive semi-conductive switches[C]. SPIE, 1993, 1873: 10-20. [5] Zhang Guanjun, Yan Zhang, Liu Yuanxing, et al. Pre-flashover and flashover phenomena of silicon- vacuum system under pulsed excitation[J]. Appl. Phys. Lett., 2002, 80(20): 3742-3744. [6] 刘静. 微米/纳米尺度传热学[M]. 北京: 科学出版社, 2001. [7] Lin T L, Park J S, George T, et al. Long-wavelength Pt-Si infrared detectors fabricated by incorporating a p+ doping spike grown by molecular beam epitaxy[J]. Appl. Phys. Lett., 1993, 62(25): 3318. [8] 施卫, 赵卫, 张显斌. 用光激发开关产生高功率亚纳秒电脉冲的研究[J]. 强激光与粒子束, 2001, 13 (6): 734-738. [9] 赵文彬, 张冠军, 严璋. 半导体闪络引起的材料表面破坏现象研究[J]. 物理学报, 2008, 57(8): 5130-5137. [10] Gradinaru G, Madangarli V P, Sudarshan T S. Surface flashover in silicon vacuum systems[J]. IEEE Trans. on Electr. Insul., 1993, 28(4): 555-565. [11] Nam S H, Sudarshan T S. New findings of pulsed surface breakdown along silicon in vacuum[J]. IEEE Trans. on Electron. Devices, 1990, 37 (12): 2466- 2471. [12] Gradinaru G, Sudarshan T S. Prebreakdown and breakdown phenomena in high-field semiconductor dielectric systems[J]. J. Appl. Phys., 1993, 73(11): 7643-7666. [13] Zutavern F J, Loubriel G M, Mclaughling D L, et al. Electrical and optical properties of high gain GaAs switches[J]. Proc. SPIE, 1992, 1632: 152-159. [14] Zutavern F J, Loubriel G M, O’ Malley M W, et al. Characteristics of current filamentation in high gain photoconductive semiconductor switching[C]. IEEE Power Modulator Symposium, 1992: 305.
2010, Vol. 25 
