IGBT关断时刻的应力波测量优化及影响因素分析

doi:10.19595/j.cnki.1000-6753.tces.211249

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Abstract Insulated gate bipolar transistor (IGBT) is the key component of power conversion, and its health state is directly related to the safe operation of the system. Acoustic emission (AE) is a fast, non-destructive and on-line detection method, which is widely used in power industry, and has potential application value in the condition evaluation of IGBT. It is reported that IGBT can generate the stress wave (SW) at the moment of turn-off, while AE sensors can measure SW signals. However, AE sensors are susceptible to interference from surrounding electric fields when measuring SW signals. In this paper, the causes of interference signals in AE sensors were analyzed, a method for measuring SW based on differential AE sensor was presented, and the anti-interference mechanism of differential AE sensor was demonstrated theoretically. The experimental results show that the differential AE sensor has good resistance to electrical interference and can extract the turn-off stress wave of IGBT effectively. Further, stress waves of IGBT under the condition of different turn-off current were extracted. It can be concluded that the turn-off current is strongly related to the strength of the SW, which can provide a reference for the exploration of the generation mechanism of stress waves and the realization of online monitoring of IGBT in the future.

Key words： Acoustic emission IGBT's turn-off stress wave interference suppression

Received: 11 August 2021

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TM930

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	Geng Xuefeng
	He Yunze
	Wang Guangxin
	Liu Songyuan
	Li Yunjia

Cite this article:

Geng Xuefeng,He Yunze,Wang Guangxin等. Measurement Optimization and Analysis of Influencing Factors of IGBT's Turn-off Stress Wave[J]. Transactions of China Electrotechnical Society, 2022, 37(21): 5503-5512.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.211249 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I21/5503

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