界面缺陷及老化状态下电力电子器件封装绝缘应力波检测与分析

doi:10.19595/j.cnki.1000-6753.tces.221282

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Abstract Power electronic devices generate stress wave during operation. This signal can reveal the internal information and working state of the devices, and can be used for on-line monitoring of power electronic devices. It is found that there are many stress wave emission sources in the devices. However, the existing research mainly focuses on the stress wave generated by the whole device, but ignores the correlation between the specific defect types and the stress wave. To solve this problem, this paper proposes a stress wave research method based on artificially set defects to explore the direct relationship between defect form and stress wave characteristics.
Firstly, from the phenomenon that space charge generates acoustic signals after being disturbed by pulsed electric field, the formation mechanism of stress wave is analyzed from the perspective of packaging insulation. It is found that the vibration of space charge at the edge of pulse in insulating material may be one of the emission sources of stress wave. Then the samples with single interface defects and aging defects were set, and the stress wave was detected. In the time domain and frequency domain, the stress wave generated by the defective samples are compared with those generated by the normal samples, to explore the influence of different defect types on stress wave parameters.
The experimental results show that the stress wave generated by the sample with interface defects can be regarded as the dislocation superposition of the stress wave generated by the sample under two normal conditions, and the waveform is related to the physical properties on both sides of the interface and the acoustic resistance at the interface. The reason for this phenomenon is that space charges will accumulate on both sides of the interface, and the stress wave generated by its vibration will interfere with the original stress wave. In addition, the acoustic resistance at the interface will also make the stress wave attenuate and disperse in the propagation process, resulting in the distortion of time-domain waveform. The spectrum analysis results show that the frequency domain components of stress waves are mainly concentrated in the range of 0~20MHz. In the case of interface, the frequency spectrum of stress wave will produce additional peaks at high frequencies, its position and amplitude are related to the interface conditions. The experimental results of aging samples show that with the increase of aging degree, the frequency domain component of stress wave gradually concentrates to the low frequency range. The reason is due to the internal structure changes of material molecules. The interaction force between molecules can be regarded as elastic force, and its vibration frequency is affected by the degree of coupling between molecules. The stronger the coupling, the greater the vibration frequency. In the aging state, due to the destruction of the molecular structure, the degree of coupling between them decreases, which leads to the reduction of the molecular vibration frequency.
Through the study of the stress wave generated by the sample under the interface and aging defects, the following conclusions can be drawn: ①Defects in power electronic devices lead to changes in the internal structure, which result in changes in the stress wave parameters. ②The influence of interface defects on stress wave is mainly reflected in the generation mechanism and propagation. The existence of the interface will distort the time-domain waveform of the stress wave and produce new spectral peaks at high frequencies. ③Aging defects reduce the coupling degree between molecules, which leads to the increase of the low-frequency component and the decrease of the high-frequency component of the stress wave generated by molecular vibration. This phenomenon becomes more obvious with the increase of the aging degree of the sample.

Key words： Power electronic devices stress wave condition monitoring interface defect aging state

Received: 30 June 2022

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TM930

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	He Dongxin
	Wei Junyu
	Wang Wanjun
	Xu Zhe
	Li Qingquan

Cite this article:

He Dongxin,Wei Junyu,Wang Wanjun等. Detection and Analysis of Stress Wave in Power Electronic Device Packaging Insulation under Interface Defects and Aging Conditions[J]. Transactions of China Electrotechnical Society, 2023, 38(3): 610-621.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.221282 OR https://dgjsxb.ces-transaction.com/EN/Y2023/V38/I3/610

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