基于开关瞬态反馈的SiC MOSFET有源驱动电路

doi:10.19595/j.cnki.1000-6753.tces.211068

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Abstract Due to the influence of internal parasitic parameters and junction capacitance, silicon carbide (SiC) power devices have great voltage and current overshoot and high-frequency switching oscillation in the process of high-speed switching, which seriously affects the operation reliability of SiC-based converters. In this paper, firstly, switching characteristics of SiC MOSFET are deeply analyzed to reveal the mathematical relationship between gate driving current and voltage and current overshoot. Then, a new active gate drive circuit with variable driving current is proposed. The gate current is actively regulated in the current or voltage rising stage of the switching process to suppress voltage and current overshoot and oscillation through the direct detection and feedback of the transient drain current change rate dI_d/dt, drain-source voltage change rate dV_ds/dt and driving voltage of SiC MOSFET V_gs. Finally, experimental results show that the proposed method can effectively reduce voltage and current overshoot by 30%~50%, suppress the oscillation and electromagnetic interference, and improve the operation reliability of SiC MOSFET converter.

Key words： SiC MOSFET active gate drive gate current current overshoot voltage overshoot

Received: 14 July 2021

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TM46

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	Liu Ping
	Chen Zijian
	Miao Yiru
	Yang Jiangtao
	Li Wei

Cite this article:

Liu Ping,Chen Zijian,Miao Yiru等. Active Gate Driver for SiC MOSFET Based on Switching Transient Feedback[J]. Transactions of China Electrotechnical Society, 2022, 37(17): 4446-4457.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.211068 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I17/4446

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