一种低母线电压尖峰的改进型Y源逆变器及其可靠性分析

doi:10.19595/j.cnki.1000-6753.tces.L90256

Abstract
Figure/Table
References
Related Citation (15)

Download: PDF (1592 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract This paper presents a modified Y source inverter (M-YSI), which owns better input current performance and low DC-link voltage spike by optimal topology. Taken SiC MOSFETs as an example, the reliability analysis process and method are provided in detail. This process builds the electro-thermal coupling model of switches based on the device parameters and analyzes the thermal behavior of the switches in the inverter bridge of the M-YSI. The thermal loading of switches based on the mission profile is obtained through the look-up table method. The life prediction of switches is realized by considering lifetime model and Miner rules. Finally, Monte Carlo analysis and Weibull fitting are used to complete the reliability analysis. The research content can provide reference for reliability analysis of similar circuits.

Key words： Modified Y source inverter low voltage spike absorbing circuit reliability

Received: 07 July 2020

PACS:

TM46

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	Yao Tingting
	Guan Yueshi
	Shi Enda
	Wang Wei
	Xu Dianguo

Cite this article:

Yao Tingting,Guan Yueshi,Shi Enda等. A Low DC-Link Voltage Spike Modified Y-Source Inverter and Its Reliability Evaluation[J]. Transactions of China Electrotechnical Society, 2021, 36(zk1): 209-217.

URL:

https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90256 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/Izk1/209

[1] 陈杰, 邓二平, 赵子轩, 等. 不同老化试验方法下SiC MOSFET失效机理分析[J]. 电工技术学报, 2020, 35(24): 5105-5114.
Chen Jie, Deng Erping, Zhao Zixuan, et al.Failure mechanism analysis of SiC MOSFET under different aging test methods[J]. Transactions of China Electro- technical Society, 2020, 35(24): 5105-5114.
[2] 段卓琳, 张栋, 范涛. SiC电机驱动系统传导电磁干扰建模及预测[J]. 电工技术学报, 2020, 35(22): 4726-4738.
Duan Zhuolin, Zhang Dong, Fan Tao.Modeling and prediction of electromagnetic interference in SiC motor drive systems[J]. Transactions of China Elec- trotechnical Society, 2020, 35(22): 4726-4738.
[3] 张建忠, 吴海富, 张雅倩. 一种SiC MOSFET谐振门极驱动电[J]. 电工技术学报, 2020, 35(16): 3453-3459.
Zhang Jianzhong, Wu Haifu, Zhang Yaqian.A resonant gate driver for SiC MOSFET[J]. Transa- ctions of China Electrotechnical Society, 2020, 35(16): 3453-3459.
[4] Ni Ze, Lü Xiaofeng, Yadav O, et al.Overview of real-time lifetime prediction and extension for SiC power converters[J]. IEEE Transactions on Power Electronics, 2020, 35(8): 7765-7794.
[5] Yen C, Lee H, Hung C, et al.Oxide breakdown reliability of SiC MOSFET[C]//2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Taipei, 2019: 1-3.
[6] Ni Ze, Lü Xiaofeng, Yadav O, et al.Review of SiC MOSFET based three-phase inverter lifetime prediction[C]//2017 IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, 2017: 1007-1014.
[7] Cheung P.SiC power MOSFET gate oxide break- down reliability-current status[C]//2018 IEEE Inter- national Reliability Physics Symposium (IRPS), Burlingame, CA, 2018: 3-5.
[8] Yang S, Bryant A, Mawby P, et al.An industry-based survey of reliability in power electronic converters[J]. IEEE Transactions on Industry Applications, 2011, 47(3): 1441-1451.
[9] Ciappa M, Castellazzi A.Reliability of high-power IGBT modules for traction applications[C]//2007 IEEE International Reliability Physics Symposium Proceedings, Phoenix, AZ, 2007: 480-485.
[10] SCT3040KLHR, SiC MOSFET datasheet[R]. Rohm, SiC MOSFET datasheet[R]. Rohm, Germany, 2018.
[11] Yu Youmin, Lee T, Chiriac A.Compact thermal resistor-capacitor-network approach to predicting transient junction temperatures of a power amplifier module[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2012, 2(7): 1172-1181.
[12] Azoui T, Tounsi P, Pasquet G.Dynamic compact thermal model for electrothermal modeling and design optimization of automotive power devices[C]// 2011 12th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2011: 1-6.
[13] 杜雄, 李高显, 吴军科, 等. 一种用于风电变流器可靠性评估的结温数值计算方法[J]. 中国电机工程学报, 2015, 35(11): 2813-2821.
Du Xiong, Li Gaoxian, Wu Junke, et al.A junction temperature numerical calculation method for reliability evaluation in wind power converters[J]. Proceedings of the CSEE, 2015, 35(11): 2813-2821.
[14] Busca C, Teodorescu R, Blaabjerg F.An overview of the reliability prediction related aspects of high power IGBTs in wind power applications[J]. Micro- electronics Reliability, 2011, 51(9-11): 1903-1907.
[15] Jannoun M.Probabilistic fatigue damage estimation of embedded electronic solder joints under random vibration[J]. Microelectronics Reliability, 2017, 78: 249-257.
[16] Mainka K, Thoben M, Schilling O.Lifetime calcu- lation for power modules, application and theory of models and counting methods[C]//Proceedings of the 2011 14th European Conference on Power Elec- tronics and Applications, Birmingham, 2011: 1-8.
[17] Hall L, Strutt E.Probabilistic physics-of-failure models for component reliabilities using Monte Carlo simulation and Weibull analysis: a parametric study[J]. Reliability Engineering & System Safety, 2003, 80(3): 233-242.
[18] Tang Junchaojie, Wang Haoran, Ma Siyuan, et al.Reliability evaluation of a single-phase H-bridge inverter with integrated active power decoupling[C]// 42nd Annual Conference of the IEEE Industrial Electronics Society, Florence, Italy, 2016: 6841-6846.