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An Improved IGBT Behavioral Model of Voltage Source Converter Based on HVDC |
Song Pengcheng, Zhang Li, Zou Liang, Zhao Tong, Sun Youliang |
School of Electrical Engineering Shandong University Jinan 250061 China |
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Abstract In voltage source converter based high voltage direct current (VSC-HVDC) converter station, the switching transient process of insulated gate bipolar transistor (IGBT) in the converter valve is one of the principal reasons for electromagnetic interference. The high-frequency electromagnetic interference will adversely affect the normal operation of key equipment in the converter station. At present, the behavioral model is widely used in the switching transient process modeling of IGBT. Although this model has significant advantages in terms of simulation speed and universality, it has some disadvantages such as low simulation accuracy. Given the shortcomings of the existing models, this paper proposes an improved behavioral model based on the vector fitting method. The vector fitting method, which is an efficient and stable rational function fitting method, is used to fit the waveforms of low simulation accuracy in the behavioral model, and the fitted formula is transformed into the form of equivalent circuit in the time domain. Then the equivalent circuit model is combined with the traditional behavioral model to obtain the more accurate IGBT transient model. Finally, this paper builds the improved behavioral model in simulation software, and conducts comparison and error analysis between the simulation waveforms and the experimental waveforms. The results show that the simulation accuracy of the proposed model is greatly improved compared with the traditional model.
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Received: 30 June 2020
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