不同工作模式下的IGBT模块瞬态热特性退化分析

doi:10.19595/j.cnki.1000-6753.tces.L80413

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Abstract In this paper, the thermal degradation characteristics of insulated gate bipolar transistor (IGBT) under different operating modes are studied. The module dynamic test experiment is designed to monitor the degradation data in real time, and the degradation of thermal resistance is measured at intervals by the transient double-interface method. Based on the experimental results, the relationship between the aging conditions and the degradation of each layer of materials is analyzed from the aspect of failure mechanism. At the same time, the finite element analysis method is used as an auxiliary method to verify the validity of the experimental measurements, and the IGBT thermal model under different boundary conditions can be obtained more intuitively. The results show that the effect of temperature excursion has a higher impact on module degradation than that of mean temperature and on-off frequency. The effect of higher frequency on the module mainly occurs inside the chip, while the effect of temperature excursion on the module mainly occurs at the packaging level.

Key words： Transient dual-interface method structure function time-constant spectrum degradation

Received: 30 June 2018 Published: 02 January 2020

PACS:

TM51

Corresponding Authors: 国家科技支撑计划（2015BAA09B01）、国家自然科技基金（51377044）、河北省自然科学基金（E2017202284）和河北省教育厅青年基金（QN2017316）资助项目

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	Liu Xiangxiang
	Li Zhigang
	Yao Fang

Cite this article:

Liu Xiangxiang,Li Zhigang,Yao Fang. Degradation Analysis of Transient Thermal Characteristics of IGBT Module under Different Working Conditions[J]. Transactions of China Electrotechnical Society, 2019, 34(zk2): 509-517.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L80413 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/Izk2/509

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