Degradation Analysis of Transient Thermal Characteristics of IGBT Module under Different Working Conditions
Liu Xiangxiang, Li Zhigang, Yao Fang
The State Key Laboratory of Reliability and Intelligentization of Electrical Equipment Cosponsored by the Ministry of Hebei University of Technology Tianjin 300130 China
Abstract In this paper, the thermal degradation characteristics of insulated gate bipolar transistor (IGBT) under different operating modes are studied. The module dynamic test experiment is designed to monitor the degradation data in real time, and the degradation of thermal resistance is measured at intervals by the transient double-interface method. Based on the experimental results, the relationship between the aging conditions and the degradation of each layer of materials is analyzed from the aspect of failure mechanism. At the same time, the finite element analysis method is used as an auxiliary method to verify the validity of the experimental measurements, and the IGBT thermal model under different boundary conditions can be obtained more intuitively. The results show that the effect of temperature excursion has a higher impact on module degradation than that of mean temperature and on-off frequency. The effect of higher frequency on the module mainly occurs inside the chip, while the effect of temperature excursion on the module mainly occurs at the packaging level.
Liu Xiangxiang,Li Zhigang,Yao Fang. Degradation Analysis of Transient Thermal Characteristics of IGBT Module under Different Working Conditions[J]. Transactions of China Electrotechnical Society, 2019, 34(zk2): 509-517.
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2019, Vol. 34 
