Abstract Due to difficult detection, in order to solve IGBT module internal chip failure and other failures, most of the measures can only be taken outside the system, the device body will still be greatly damaged. The internal failure is mostly caused by the fall-off or breakage of the Aluminum bonding wires. The failure of observing the internal part of the IGBT tend to result in the incorrect recognization of the failure condition of the module. The lack of timely security measures may trigger a more serious system failure. In this paper, the working characteristics of the multi-chip parallel package high voltage high power IGBT module considering the spurious parameters are studied. The effect of stray inductance and gate capacitance on the working state of the chip is analyzed for the structural characteristics of Infineon 6.5kV IGBT module. The Based on the parasitic parameters of the aluminum bonding wire between the modules, a spurious parameter identification method based on the least squares algorithm is constructed. Based on the equivalent circuit of IGBT gate, the change of circuit parameter or structure caused by aluminum bond fault is studied. By sampling the gate voltage and current data, the least squares method is used to estimate the fault type and the spurious parameters, the effectiveness of the method is verified by simulations and experiments.
Huang Xianjin,Ling Chao,Sun Hu等. The Leading Criterion for Defects and Failures in Multi-Chip Parallel Package IGBTs[J]. Transactions of China Electrotechnical Society, 2019, 34(zk2): 518-527.
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2019, Vol. 34 
