分立型功率MOSFET结温估计的非线性热网络模型和参数辨识方法

doi:10.19595/j.cnki.1000-6753.tces.190145

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Abstract Discrete power MOSFET is an important kind of power electronic device and its safe operation is heavily dependent on the junction temperature estimation. Traditional junction temperature estimation model has high requirement for reliability of case-temperature sensor installation, since the measured case temperature of power device is used as the boundary condition of junction temperature estimation. Therefore, the estimated junction temperature of traditional model could be unreliable, when the temperature sensor falls off from the discrete power MOSFET whose package size is relatively small. To address this, a nonlinear thermal network model for junction estimation of discrete power MOSFET was proposed in this paper. In the proposed model, the ambient temperature of power MOSFET, which can be measured more reliably, was used as the boundary condition of junction temperature estimation. The nonlinear heat convection and heat radiation were taken account into the proposed model to describe the heat transfer between the power MOSFET and ambient space. In order to determine the thermal parameters in the proposed model, a parameter identification method was presented. The objective function in this identification method was mathematically proved to be a convex function and the prime-dual interior point method was employed to obtain the globally optimal solution of objective function. Several experiments indicate that the proposed model can improve the reliability of discrete power MOSFET junction temperature estimation when case temperature measurement is not reliable.

Key words： Discrete power devices junction temperature estimation nonlinear thermal network model parameter identification primal-dual interior point method

Received: 14 January 2019 Published: 28 June 2019

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	Wan Meng
	Ying Zhanfeng
	Zhang Wei

Cite this article:

Wan Meng,Ying Zhanfeng,Zhang Wei. Nonlinear Thermal Network Model and Parameter Identification Method for Junction Temperature Estimation of Discrete Power MOSFET[J]. Transactions of China Electrotechnical Society, 2019, 34(12): 2477-2488.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.190145 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/I12/2477

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