4 500 V碳化硅SBD和JFET功率模块的制备与测试

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Abstract Based on self-developed SiC devices,this paper presents the fabrication and characterization of a 4 500 V/150 A SiC Schottky barrier diode (SBD) power module and a 4 500 V/50 A junction field effect transistor (JFET) power module.Additionally,with an appropriate gate drive circuit,the static and dynamic performances of both modules are also evaluated.The testing results indicate good current-conducting,voltage-blocking,and switching capabilities of the fabricated modules.This work demonstrates the highest power level of SiC power modules with self-fabricated chips in China.

Key words： SiC Schottky barrier diode junction field effect transistor power module

Received: 22 December 2014 Published: 07 December 2015

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TN30

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	Articles by authors
	He Junwei
	Chen Sizhe
	Ren Na
	Bai Song
	Tao Yonghong
	Liu Ao
	Sheng Kuang

Cite this article:

He Junwei,Chen Sizhe,Ren Na等. Fabrication and Testing of 4 500 V SiC SBD and JFET Power Modules[J]. Transactions of China Electrotechnical Society, 2015, 30(17): 63-69.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2015/V30/I17/63

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