Abstract Based on self-developed SiC devices,this paper presents the fabrication and characterization of a 4 500 V/150 A SiC Schottky barrier diode (SBD) power module and a 4 500 V/50 A junction field effect transistor (JFET) power module.Additionally,with an appropriate gate drive circuit,the static and dynamic performances of both modules are also evaluated.The testing results indicate good current-conducting,voltage-blocking,and switching capabilities of the fabricated modules.This work demonstrates the highest power level of SiC power modules with self-fabricated chips in China.
He Junwei,Chen Sizhe,Ren Na等. Fabrication and Testing of 4 500 V SiC SBD and JFET Power Modules[J]. Transactions of China Electrotechnical Society, 2015, 30(17): 63-69.
[1] 钱照明,张军明,吕征宇,等.我国电力电子与电力传动面临的挑战与机遇[J].电工技术学报,2004,19(8):10-22. Qian Zhaoming,Zhang Junming,Lv Zhengyu,et al.Challenge and opportunity for power electronics and electrical drive in China[J].Transactions of China Electrotechnical Society,2004,19(8):10-22. [2] 钱照明,盛况.大功率半导体器件的发展与展望[J].大功率变流技术,2010(1):1-9. Qian Zhaoming,Sheng Kuang.Development and perspective of high power semiconductor device[J].Converter Technology & Electric Traction,2010(1):1-9. [3] 徐殿国,李向荣.极限温度下的电力电子技术[J].电工技术学报,2006,21(3):15-23. Xu Dianguo,Li Xiangrong.Power electronics in extreme temperature applications[J].Transactions of China Electrotechnical society,2006,21(3):15-23. [4] 盛况,郭清,张军明,等.碳化硅电力电子器件在电力系统的应用展望[J].中国电机工程学报,2012,32(30):1-7. Sheng Kuang,Guo Qing,Zhang Junming,et al.Development and prospect of SiC power devices in power grid[J].Proceedings of CSEE,2012,32(30):1-7. [5] 王学梅.宽禁带碳化硅功率器件在电动汽车中的研究与应用[J].中国电机工程学报,2014,34(3):371-379. Wang Xuemei.Researches and applications of wide bandgap SiC power devices in electric vehicles[J].Proceedings of CSEE,2014,34(3):371-379. [6] Alatise O,Adotei N,Allotey P,et al.The impact of parasitic inductance on the performance of silicon-carbide schottky barrier diodes[J].IEEE Transactions on Power Electronics,2012,27(8):3826-3833. [7] Sugawara Y,Takayama D,Asano K,et al.12～19 kV 4H-SiC pin diodes with low power loss[C].Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs,Osaka,Japan,2001:27-30. [8] 黄润华,李理,陶永洪,等.4 500 V碳化硅肖特基二极管研究[J].固体电子学研究与进展,2013,33(3):220-223. Huang Runhua,Li Li,Tao Yonghong,et al.Research of 4.5 kV SiC JBS diode[J].Research and Progress of SEE,2013,33(3):220-223. [9] Peftitsis D,Baburske R,Rabkowski J,et al.Challenges regarding parallel connection of SiC JFETs[J].IEEE Transactions on Power Electronics,2013,28(3):1449-1463. [10]Xu F,Jiang D,Wang J,et al.Development of a SiC JFET-Based six-pack power module for a fully integrated inverter[J].IEEE Transactions on Power Electronics,2013,28(3):1464-1477. [11]Chen S,Sheng K.Design consideration and fabrication of 1.2 kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors[J].China Physics B,2014,23(7):077201. [12]Round S,Heldwein M,Kolar K,et al.A SiC JFET driver for a 5 kW,150 kHz three-phase PWM converter[C].Proceedings of IEEE Industry Applications Conference,Hong Kong,2005:410-416.
2015, Vol. 30 
