一种基于米勒钳位的SiC MOSFET桥臂串扰抑制驱动电路

doi:10.19595/j.cnki.1000-6753.tces.250889

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Abstract SiC MOSFETs are widely used due to their advantages of fast switching speed, high voltage tolerance, and high thermal conductivity. However, the high-speed switching characteristics also introduce crosstalk into the drive circuit, seriously affecting the system's reliability. To mitigate the bridge-arm crosstalk, the existing methods can be categorized into three types. The first increases the gate-source impedance, which is simple but increases the power losses or slows the switching speed. The second employs a negative turn-off voltage to mitigate forward crosstalk, but, in turn, aggravates reverse crosstalk and may damage the power switch. The third applies Miller clamping, which provides a low-impedance path for Miller current during switching transients. Excellent crosstalk suppression can be achieved, yet most implementations remain complex. This paper proposes a novel SiC MOSFET bridge-arm crosstalk suppression drive circuit that combines Miller clamping with negative turn-off voltage.
Firstly, the causes of the bridge-arm crosstalk are analyzed. During the switching transients of the power switch, a displacement current is generated in the drive circuit of the complementary power switch in the same bridge arm, thus inducing the gate-source crosstalk voltage. This voltage may trigger false turn-on or reverse breakdown of the power switch. The influencing factors of crosstalk are then analyzed from the aspects of parasitic parameters and operating modes. Regarding parasitic parameters, the gate and drain inductances impact crosstalk voltage, whereas the source inductance has opposing effects on forward and reverse crosstalk. The gate resistor demands a compromise between the drive oscillations and crosstalk voltage. In terms of operating modes, crosstalk between soft-switching and hard-switching modes is compared. When the power switch operates in soft-switching mode, the forward crosstalk of the complementary power switch is significantly reduced. In contrast, the reverse crosstalk slightly increases and remains safely bounded.
Secondly, a novel bridge-arm crosstalk suppression drive circuit is proposed. The topology and operating principles of the proposed drive circuit are provided. To suppress forward crosstalk, a low-impedance path with an auxiliary switch connected across the gate-to-source of the power switch is introduced to shunt the crosstalk current and bias the gate to a negative voltage via a capacitor in parallel with a Zener diode. To suppress reverse crosstalk, the auxiliary switch's body diode diverts the crosstalk current. As a result, both forward and reverse crosstalk are mitigated effectively. Then, a step-by-step parameter design guideline for the proposed drive circuit is provided, along with an example covering passive-component sizing and active-device selection.
Finally, the proposed drive circuit is validated through simulations and experiments. Gate-voltage waveforms with and without the suppression circuit are analyzed under both soft-switching and hard-switching modes. Soft-switching reduces forward crosstalk, and the proposed drive circuit further lowers the crosstalk voltage in both modes. Experimental results verify the effectiveness of the proposed drive circuit. A comparison with other drive circuits shows that the proposed driver circuit employs only one low-impedance path to suppress both forward and reverse crosstalk, reducing the number of active devices and the drive circuit's complexity.

Key words： SiC MOSFET Miller clamping drive circuit bridge-arm crosstalk

Received: 26 May 2025

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	Liu Fei
	Yang Xu
	Ruan Xinbo

Cite this article:

Liu Fei,Yang Xu,Ruan Xinbo. A Miller Clamping-Based Drive Circuit for Bridge-Arm Crosstalk Suppression in SiC MOSFETs[J]. Transactions of China Electrotechnical Society, 2026, 41(10): 3437-3447.

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[1] 胡嘉豪, 王英伦, 代豪豪, 等. SiC MOSFET器件栅氧可靠性研究综述[J]. 电源学报, 2024, 22(4): 1-11.
Hu Jiahao, Wang Yinglun, Dai Haohao, et al.A review of gate oxygen reliability research on SiC MOSFET devices[J]. Journal of Power Supply. 2024, 22(4): 1-11.
[2] 宛新春, 陈其工, 杨锦涛, 等. 基于栅极和漏极电压检测的SiC MOSFET短路保护电路研究[J]. 电工技术学报, 2025, 40(4): 1145-1155, 1168.
Wan Xinchun, Chen Qigong, Yang Jintao, et al.Research on SiC MOSFET short circuit protection circuit based on gate and drain voltage detection[J]. Transactions of China Electro-technical Society, 2025, 10(4): 1145-1155, 1168.
[3] 王议锋, 车超昌, 陈博, 等. 基于SiC器件的高压宽范围直流辅助电源[J]. 电工技术学报, 2025, 40(3): 786-799.
Wang Yifeng, Che Chaochang, Chen Bo, et al.High voltage wide range DC auxiliary power supply based on SiC devices[J]. Transactions of China Electro- technical Society, 2025, 40(3): 786-799.
[4] 张少昆, 孙微, 范涛, 等. 基于分立器件并联的高功率密度碳化硅电机控制器研究[J]. 电工技术学报, 2023, 38(22): 5999-6014.
Zhang Shaokun, Sun Wei, Fan Tao, et al.Research on high power density silicon carbide motor controller based on parallel connection of discrete devices[J]. Transactions of China Electrotechnical Society, 2023, 38(22): 5999-6014.
[5] Hofstetter P, Bakran M M.The two-dimensional short-circuit detection protection for SiC MOSFETs in urban rail transit application[J]. IEEE Transactions on Power Electronics, 2020, 35(6): 5692-5701.
[6] 刘畅. SiC MOSFET串扰及高频振荡抑制研究[D]. 徐州: 中国矿业大学, 2020.
Liu Chang.Research on crosstalk and high frequency oscillation suppression of SiC MOSFET[D]. Xuzhou: China University of Mining and Technology, 2020.
[7] 王宁, 张建忠. 基于开关轨迹优化的SiC MOSFET有源驱动电路研究综述[J]. 电工技术学报, 2022, 37(10): 2523-2537.
Wang Ning, Zhang Jianzhong.Review of active gate driver for SiC MOSFET with switching trajectory
8 optimization[J]. Transactions of China Electrotech- nical Society, 2022, 37(10): 2523-2537.
[8] 邱嘉晖. SiC MOSFET建模与有源驱动电路研究[D].哈尔滨: 哈尔滨工业大学, 2022.
Qiu Jiahui.SiC MOSFET modelling and active drive circuit study[D]. Harbin: Harbin Institute of Tech- nology, 2022.
[9] Wang Panbao, Zhang Linzhi, Lu Xiaonan, et al.An improved active crosstalk suppression method for high-speed SiC MOSFETs[J]. IEEE Transactions on Industry Applications, 2019, 55(6): 7736-7744.
[10] 林铭恩. 面向NPC三电平变换器的SiC MOSFET桥臂串扰与振荡抑制研究[D]. 徐州: 中国矿业大学, 2021.
Lin Ming'en.Research on crosstalk and oscillation suppression of SiC MOSFET bridge arm for NPC three-level converter[D]. Xuzhou: China University of Mining and Technology, 2021.
[11] Wang Jianjing, Chung H S.A novel RCD level shifter for elimination of spurious turn-on in the bridge-leg configuration[J]. IEEE Transactions on Power Elec- tronics, 2015, 30(2): 976-984.
[12] 郑翔, 杭丽君, 曾庆威, 等. SiC MOSFET新型负压关断串扰抑制驱动电路[J]. 中国电机工程学报, 2023, 43(20): 8038-8048.
Zheng Xiang, Hang Lijun, Zeng Qingwei, et al.Novel negative voltage turn-off crosstalk suppression driver circuit for SiC MOSFETs[J]. Proceedings of the CSEE, 2023, 43(20): 8038-8048.
[13] Liu Chunhui, Zhang Zhengda, Liu Yifu, et al.Smart self-driving multilevel gate driver for fast switching and crosstalk suppression of SiC MOSFETs[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 442-453.
[14] Bi Chuang, Ou Hong, Kang Qingzhou, et al.A novel driver circuit on crosstalk suppression in SiC MOSFETs[C]//2021 IEEE International Symposium on Circuits and Systems (ISCAS), Daegu, Korea, 2021: 1-5.
[15] 李国文, 杭丽君, 童安平, 等. 串扰有源抑制型SiC MOSFET驱动方法[J]. 中国电机工程学报, 2021, 41(11): 3915-3923.
Li Guowen, Hang Lijun, Tong Anping, et al.The driver design of SiC MOSFET with active crosstalk suppression[J]. Proceedings of the CSEE, 2021, 41(11): 3915-3923.
[16] Wu Wentao, Wang Mingyi, Kang Kai, et al.SiC MOSFET crosstalk analysis and suppression circuit design[C]//2022 25th International Conference on Electrical Machines and Systems (ICEMS), Chiang Mai, Thailand, 2022: 1-6.
[17] 何杰, 刘钰山, 毕大强, 等. 碳化硅MOSFET桥臂串扰机理分析与抑制策略[J]. 中国电机工程学报, 2023, 43(15): 6005-6020.
He Jie, Liu Yushan, Bi Daqiang, et al.Analysis and suppression strategy of crosstalk mechanism in SiC MOSFETs bridge arm[J]. Proceedings of the CSEE, 2023, 43(15): 6005-6020.
[18] 梁美, 李艳, 郑琼林, 等. 桥式电路中不同封装SiC MOSFET串扰问题分析及低栅极关断阻抗的驱动电路[J]. 电工技术学报, 2017, 32(18): 162-174.
Liang Mei, Li Yan, Zheng Trillion Q, et al.Analysis for crosstalk of SiC MOSFET with different packages in a phase-leg configuration and a low gate turn-off impedance driver[J]. Transactions of China Electro- technical Society, 2017, 32(18): 162-174.
[19] Guo Xiaoli, Wu Dian, Zhang Lei, et al.Modeling and suppression of the crosstalk issue considering the influence of the parasitic parameters of SiC MOSFETs[J]. IEEE Access, 2022, 10: 114118-114134.
[20] 陈滢, 李成敏, 鲁哲别, 等. 半桥结构中的SiC MOSFET串扰电压建模研究[J]. 中国电机工程学报, 2020, 40(6): 1775-1787.
Chen Ying, Li Chengmin, Lu Zhebie, et al.Modeling of SiC MOSFET crosstalk voltage in half bridge circuit[J]. Proceedings of the CSEE, 2020, 40(6): 1775-1787.
[21] 刘鑫. 基于SiC MOSFET的PCB优化设计[D]. 武汉: 华中科技大学, 2021.
Liu Xin.PCB optimization design based on SiC MOSFETs[D]. Wuhan: Huazhong University of Science and Technology, 2021.
[22] Erickson R W, Maksimovic D.Fundamentals of Power Electronics (Third Edition)[M]. Springer Nature Switzerland AG, 2020.