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| Active Neutral-Point-Clamped Converter Based on Heterogeneous Hybrid Half-Bridge Shunt Output and Its Control Strategy |
| Zhong Yan1, Guo Qi1, Hou Yuchao2, Tu Chunming1, Zhang Huaying2 |
1. National Electric Power Conversion and Control Engineering Technology Research Center Hunan University Changsha 410082 China;
2. Shenzhen Power Supply Co. Ltd Shenzhen 518001 China |
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Abstract The multi-level converter based on the hybrid of SiC and Si devices can achieve the equivalent switching frequency and operating loss similar to the full SiC device converter, greatly reducing the device cost. To realize the comprehensive optimization of efficiency and cost of active neutral-point-clamped converter, this paper proposes an active neutral-point-clamped converter based on heterogeneous hybrid half-bridge shunt output, referred to as hybrid active neutral-point-clamped converter (HANPC). HANPC consists of a fundamental frequency module based on a Si IGBT device, a low-frequency module, and a high-frequency module based on a SiC MOSFET device.
This paper adopts the high- and low-frequency hybrid modulation strategy to utilize the low switching loss of SiC devices. Furthermore, the shunt compensation principle of the low-frequency and high-frequency modules is introduced. The low frequency of the Si device compensates for the large current, while the high frequency of the SiC device compensates for the small current and improves the waveform quality of the output current. The split ratio and switching frequency of the low-frequency and high-frequency modules are optimized, and the control strategy of HANPC is given.
The proposed topology can ensure the waveform quality of the total current. The Si IGBT works at the fundamental frequency and low frequency, while the high-frequency switching action is concentrated on the SiC MOSFET. In terms of operating loss, based on the joint simulation platform of Matlab/Simulink and PLECS, HANPC is compared with the existing topology under different load powers and equivalent switching frequencies. Taking the load power of 39 kvar and the equivalent switching frequency of 20kHz as an example, the total loss of the proposed HANPC topology is 38.1% and 17.9% lower than that of Si-ANPC and SiC-ANPC, respectively. In terms of cost, the proposed topology is compared with the existing topology in terms of switching devices, drive chips, drive power supplies, and filter inductors. The proposed topology cost is 46.7% higher than that of Si-ANPC and 54.5% lower than that of SiC-ANPC.
The following conclusions can be drawn. (1) The proposed HANPC topology distributes most of the load current to the low-frequency module through the shunt output, while the high-frequency module only passes a small part of the current. The required capacity of the SiC device in the high-frequency module is significantly reduced. Compared with the traditional full SiC-ANPC topology, the cost is reduced by 54.5%. (2) The proposed modulation strategy can focus the high-frequency switching action of the output voltage on the SiC MOSFET device, and the Si IGBT works at the fundamental frequency and low frequency, effectively improving the grid-connected converter's operation efficiency. (3) The efficiency of the proposed HANPC is close to that of SiC-ANPC under light load conditions. When the output power is greater than 36 kvar, the efficiency of the proposed HANPC is better than that of SiC-ANPC and ANPC topology based on the parallel output of SiC devices.
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Received: 06 September 2024
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2025, Vol. 40 
