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| Development of Large Size IGBT Chip with High Power Capacity of 4 500V/600A |
| Liu Guoyou1,2, Huang Jianwei1,3, Qin Rongzhen1,3, Zhu Chunlin1,3 |
1. State key Laboratory of Advanced Power Semiconductor Devices Zhuzhou 412001 China;
2. Zhuzhou CRRC Times Electric Co. Ltd Zhuzhou 412001 China;
3. Zhuzhou CRRC Times Semiconductor Co. Ltd Zhuzhou 412001 China |
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Abstract Increasing IGBT single-chip current capacity is essential for reducing the parallel number of packaged chips, simplifying the package architecture and improving the chip current sharing capability. According to the application requirements of high voltage, high current and high reliability for IGBT chips, this paper realized cell switching synchronization through robust cell design and its coordinated control, and solved the process manufacturing of large size chips through special photolithography technology. The single-chip press packaging was used to verify the design and performance of large size chips. A technical path for the design, manufacturing and verification of large size IGBT chips was explored. The world's first 42mm×42mm large-size high-voltage IGBT chip with the power capacity of 4 500V/600A was developed. It has excellent dynamic and static characteristics, a wider safe operation area (SOA), and can significantly improve the packaging power density and reliability.
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Received: 13 December 2019
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[1] 丁荣军, 刘国友. 轨道交通用高压IGBT技术特点及其发展趋势[J]. 机车电传动, 2014(1): 1-6.
Ding Rongjun, Liu Guoyou.Technical features and development trend of high-voltage IGBT for rail transit traction application[J]. Electric Drive for Locomotives, 2014(1): 1-6.
[2] 刘国友, 黄建伟, 覃荣震, 等. 智能电网用高功率密度1500A/3300V绝缘栅双极晶体管模块[J]. 中国电机工程学报, 2016, 36(10): 2784-2792.
Liu Guoyou, Huang Jianwei, Qin Rongzhen, et al.High power density 1500A/3300V insulated gate bipolar transistor module for smart grid application[J]. Proceedings of the CSEE, 2016, 36(10): 2784-2792.
[3] 刘国友, 罗海辉, 李群锋, 等. 轨道交通用750A/ 6500V高功率密度IGBT模块[J]. 机车电传动, 2016(6): 21-26.
Liu Guoyou, Luo Haihui, Li Qunfeng, et al.750A/ 6500V high power density IGBT module for rail transit application[J]. Electric Drive for Locomotives, 2016(6): 21-26.
[4] 汪波, 罗毅飞, 张烁, 等. IGBT极限功耗与热失效机理分析[J]. 电工技术学报, 2016, 31(12): 135-141.
Wang Bo, Luo Yifei, Zhang Shuo, et al.Analysis of limiting power dissipation and thermal failure mechanism[J]. Transactions of China Electrotecnical Society, 2016, 31(12): 135-141.
[5] 刘国友, 窦泽春, 罗海辉, 等. 高功率密度3600A/ 4500V压接型IGBT研制[J]. 中国电机工程学报, 2018, 38(16): 4855-4862.
Liu Guoyou, Dou Zechun, Luo Haihui, et al.Development of high power density 3600A/4500V press-pack IGBT[J]. Proceedings of the CSEE, 2018, 38(16): 4855-4862.
[6] 刘国友, 窦泽春, 罗海辉, 等. 压接型IGBT均流设计研究[J]. 中国电力, 2019, 52(9): 20-29.
Liu Guoyou, Dou Zechun, Luo Haihui, et al.Current- sharing design of press-pack IGBT[J]. Electric Power, 2019, 52(9): 20-29.
[7] 周静, 康升扬, 李辉, 等. 内部压力不均对压接式IGBT器件电热特性的影响分析[J]. 电工技术学报, 2019, 34(16): 3408-3415.
Zhou Jing, Kang Shengyang, Li Hui, et al.Simulation of influence of unbalanced clamping force on electro- thermal characteristics of press-pack IGBT devices[J]. Transactions of China Electrotecnical Society, 2019, 34(16): 3408-3415.
[8] 唐新灵, 崔翔, 赵志斌, 等. 并联IGBT芯片的等离子体抽取渡越时间振荡机理及其特性分析[J]. 电工技术学报, 2018, 33(10): 254-264.
Tang Xinling, Cui Xiang, Zhao Zhibin, et al.Mecha- nism and characteristics of plasma extraction transit time oscillation of paralleled IGBT chips[J]. Transa- ctions of China Electrotecnical Society, 2018, 33(10): 254-264.
[9] 邓二平, 赵志斌, 张朋, 等. 压接型IGBT器件内部压力分布[J]. 电工技术学报, 2017, 32(6): 201-208.
Deng Erping, Zhao Zhibin, Zhang Peng, et al.Clam- ping force distribution within press pack IGBTs[J]. Transactions of China Electrotecnical Society, 2017, 32(6): 201-208.
[10] Baliga B J.Fundamentals of power semiconductor devices[M]. New York: Springer US, 2008.
[11] 刘国友, 罗海辉, 张鸿鑫, 等. 基于全铜工艺的750A/ 6500V高性能IGBT模块[J]. 电工技术学报, 2020, 35(21): 4501-4510.
Liu Guoyou, Luo Haihui, Zhang Hongxin, et al.High performance 750A/6500V IGBT module based on full-copper process[J]. Transactions of China Electro- technical Society, 2020, 35(21): 4501-4510.
[12] Chokhawala R S, Catt J, Kiraly L.Discussion on IGBT short-circuit behavior and fault protection schemes[J]. IEEE Transactions on Industry Appli- cations, 1995, 31(2): 256-263.
[13] Wang Hengyu, Su Ming, Sheng Kuang.Theoretical performance limit of the IGBT[J]. IEEE Transactions on Electron Devices, 2017, 64(10): 4184-4192.
[14] 张大华, 马亮, 张中华, 等. 低导通损耗宽安全工作区4500V IGBT器件研制[J]. 大功率变流, 2017(5): 60-64.
Zhang Dahua, Ma Liang, Zhang Zhonghua, et al.Development of the 4500V IGBT device with low on- state loss and wide safe operation area[J]. High Power Converter Technology, 2017(5): 60-64.
[15] Long Hongyao, Sweet M R, Ngwendson Luther-King, et al. Current distribution analysis of insulated gate bipolar transistor cells[J]. Japanese Journal of Applied Physics, 2010, 49: 04DP14.
[16] 刘国友, 覃荣震, 黄建伟, 等. 一种功率半导体芯片栅电阻[P]. 中国, ZL201310259231.X.
[17] Liu Guoyou, Ding Rongjun, Luo Haihui.Deve- lopment of 8-inch key processes for insulated-gate bipolar[J]. Engineering, 2015, 1(3): 361-366.
[18] 程银华, 刘国友, 王梦洁, 等. 一种功率半导体芯片, 该芯片的光刻版及其曝光方法[P]. 中国, ZL201710325616.X.
[19] Christian G.Low temperature sinter technology die attachment for power electronic applications[C]// Chartered Institute of Procurement & Supply, Nuremberg, 2010: 1-5.
[20] Krebs T, Duch S, Schmitt W, et al.A breakthrough in power electronics reliability- new die attach and wire bonding materials[C]//IEEE Electronic Components & Technology Conference, Las Vegas, 2013: 28-31.
[21] Westcode datasheet T0600TB45A[Z].Westcode datasheet T0600TB45A[Z]. 2011: 1-7.
[22] Eicher S, Rahimo M, Tsyplakov E.4.5kV press pack IGBT designed for ruggedness and reliability[C]// Conference Record of the 2004 IEEE Industry Applications Conference, 39th IAS Annual Meeting, Seattle, USA, 2004: 1534-1539. |
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2021, Vol. 36 
