适用于器件级到系统级热仿真的IGBT传热模型

doi:10.19595/j.cnki.1000-6753.tces.160954

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Abstract Based on the device to system grade and multi-timescale characteristics of thermal network, a method of thermal modelling is proposed. The thermal network model of insulated gate bipolar transistor (IGBT) is established based on the network structure of RC and thermal theory. The operation rules of junction temperature, simplified standard and method of single-layer and multi-layer network structure is found out. On this basis, taking the different requirements of device to system for thermal model as the main line and the different timescale of each package layer time constant as the breakthrough point, the IGBT thermal models for device to system thermal simulation are established. The results of simulations and experiments verify the rightness and accuracy of the established models. It is significant in theory and practical application for finding out the characteristics of thermal network structure and the operation rules of junction temperature and realizing the independent and joint simulation of power electronic device to system.

Key words： Thermal network model operation rules of junction temperature device to system model accuracy model efficiency

Received: 26 June 2016 Published: 19 July 2017

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TN306

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	Liu Binli
	Luo Yifei
	Xiao Fei
	Wang Bo

Cite this article:

Liu Binli,Luo Yifei,Xiao Fei等. IGBT Thermal Model for Thermal Simulation of Device to System[J]. Transactions of China Electrotechnical Society, 2017, 32(13): 1-13.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.160954 OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I13/1

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