Transactions of China Electrotechnical Society  2017, Vol. 32 Issue (12): 25-32    DOI:
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Multi-Time Scale Transient Models for Power Semiconductor Devices (PartⅡ: Applications Analysis and Model Connection)
Jiang Ye, Zhao Zhengming, Shi Bochen, Yuan Liqiang
State Key Lab of Control and Simulation of Power System and Generation Equipment Department of Electrical Engineering Tsinghua University Beijing 100084 China

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Abstract  In order to better implement the transient models of multi-time scale switch in power electronics converter simulation analysis, a simulation method of multiple-timescale models is presented in this paper, and the adaptability of the transient model is illustrated by experimental results. Different applications for multiple-timescale models are also discussed according to the specific switching characteristics reflected by different timescale transient models. In addition, under discrete state event-driven (DSED) simulation system, this paper presents the connection and switching principles between multi-time scale models. As a result, such models can be employed in all-time simulation of power electronics converters.
Key wordsPower semiconductor devices      multi-time scale      transient model      switching characteristics      discrete state event driven     
Received: 09 April 2017      Published: 30 June 2017
PACS: TM464  
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Jiang Ye
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Yuan Liqiang
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Jiang Ye,Zhao Zhengming,Shi Bochen等. Multi-Time Scale Transient Models for Power Semiconductor Devices (PartⅡ: Applications Analysis and Model Connection)[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 25-32.
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