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Multi-Time Scale Transient Models for Power Semiconductor Devices (PartⅠ: Switching Characteristics and Transient Modeling) |
Shi Bochen, Zhao Zhengming, Jiang Ye, Zhu Yicheng |
State Key Laboratory of Control and Simulation Power System and Generation Equipments Department of Electrical Engineering Tsinghua University Beijing 100084 China |
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Abstract Switching mode is the basic mode of electromagnetic energy conversion in power electronics, meanwhile switching characteristics become the key point. From this perspective, this paper presents the multi-time scale transient models of power semiconductor devices, in which different models are adapted to describe the switching transient process corresponding to different time scales. In addition, under discrete event-driven simulation system, this paper presents the connection and switching principles between multi-time scale models, so that such models can be employed in simulation of power electronics converters. As shown in this paper, all parameters of the multi-time scale models can be extracted from datasheet directly. It is significant in design and analysis of power electronics systems.
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Received: 06 February 2017
Published: 30 June 2017
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