基于优化长短期记忆神经网络的IGBT寿命预测模型

doi:10.19595/j.cnki.1000-6753.tces.222231

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Abstract

Insulated Gate Bipolar Transistors (IGBTs) are the core components of power electronic systems for the conversion and control of electrical energy. However, the reliability of IGBT is not as high as expected due to the complex environment and operating conditions, and the sudden failure of IGBT will lead to unplanned downtime of the entire system. Therefore, the assessment of the remaining useful lifetime (RUL) of IGBT will help to guide the regular maintenance and reduce economic losses. To prevent the sudden failure of IGBT, it is urgent to accurately predict the RUL of IGBT, but most existing methods suffer from low prediction accuracy and high uncertainty. To address this problem, this paper proposes an IGBT life prediction model based on optimized long short-term memory (LSTM). Starting from the two cores of the data-driven model, optimize and upgrade “data” and “model”, which can effectively improve the accuracy and reduce the uncertainty of the model prediction.
Firstly, the raw condition monitoring (CM) data often contains many contaminated data that appears abnormal due to environmental interference and limitations of measurement technology. Meanwhile, CM data may also appear abnormal when IGBT devices degrade or fail. This data contains important information to characterize degradation and failure of IGBT. It cannot be processed simultaneously with contaminated data. The proposed model extracts and enhances degraded features by decomposing the IGBT degraded data into multiple modes using the successive variational mode decomposition (SVMD) technique and then reconstructing the useful modes. Secondly, the selection of the model’s hyperparameters will greatly affect the learning ability and training effect of the model. Traditionally, the selection of hyperparameters by empirical trial-and-error method has contingency and randomness, which will seriously affect the performance of the model. The proposed model uses Bayesian optimization (BO) method to realize global optimization of multiple hyperparameters in the model through Gaussian process (GP) proxy model and expectation improvement (EI) acquisition function. Finally, the effectiveness and superiority of the LSTM prediction model based on SVMD and BO is verified with real IGBT degradation data.
The validation results show that the predicted RUL is not very close to the real RUL by the BO+LSTM method, and even cannot meet the 30% error requirement at CM=160 cycles. In contrast, the errors of the conventional LSTM and RNN methods are larger, while the predicted RUL errors using the proposed model meet the requirements for all CM cycles. In addition, the evaluation of the overall performance of the model shows that as an improvement on the RNN, the average relative accuracy (Y_ARA) of the LSTM method improves from 34.65% of RNN to 50.53% and the average width of prediction interval (W_API) reduces from 365.3 cycles to 272 cycles. In comparison, the BO+LSTM method has a better prediction performance. Furthermore, the Y_ARA of the proposed model improves to 90.91% and the W_API decreases to 169.3 cycles, which is the best performance among several models. Quantitative analysis shows that the proposed model improves the lifetime prediction accuracy by 13% and reduces the prediction uncertainty by 34% compared to the BO+LSTM model.
The conclusions can be drawn: (1) The BO algorithm is used to optimize the hyperparameters of the LSTM, which improves the prediction accuracy of the model. (2) The SVMD is used to extract the degraded features of the IGBT, which reduces the uncertainty and improves the accuracy of the model prediction. (3) Compared with other models, the proposed model can maintain a high prediction accuracy with less CM data and its long-term prediction performance is better.

Key words： IGBT reliability lifetime prediction mode decomposition failure distribution

Received: 29 November 2022

PACS:	TN322.8
	TM46

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	Ren Hongyu
	Yu Yaoyi
	Du Xiong
	Liu Junliang
	Zhou Junjie

Cite this article:

Ren Hongyu,Yu Yaoyi,Du Xiong等. IGBT Lifetime Prediction Model Based on Optimized Long Short-Term Memory Neural Network[J]. Transactions of China Electrotechnical Society, 0, (): 131-131.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.222231 OR https://dgjsxb.ces-transaction.com/EN/Y0/V/I/131

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