计及芯片导通压降温变效应的功率模块三维温度场解析建模方法

doi:10.19595/j.cnki.1000-6753.tces.201440

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Abstract Insulated gate bipolar transistor power modules are widely used in EV powertrain systems. The thermal design is challenged by the demands of high power density and extreme operating conditions. Due to the temperature effect of semiconductor voltage drop, the chip current presents a non-uniform distribution. Therefore, the traditional thermal model cannot accurately describe the temperature field, which brings difficulties to the robustness design under overcurrent conditions. In this paper, combined with a continuous 3-D temperature field model and a multicellular 1-D electrical model, a field-circuit coupling based 3-D temperature field is proposed to achieve accurate description of the semiconductor temperature. The error is less than 4.0%. Furthermore, it is found that the multicellular current is concentrated on the edge of the IGBT active region. The non-uniform effect can suppress the peak temperature and can effectively improve the overcurrent capability. Finally, the proposed analytical model is verified by the SEMiX603GB12E4p module. The FEM and experimental results show that the model can describe the temperature effect at different current levels, and its accuracy and effectiveness are verified.

Key words： Power module temperature effect field-circuit coupling 3D temperature field over- current capabilit

Received: 01 November 2020

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TN46

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	Chen Yu
	Zhou Yu
	Luo Haoze
	Li Wuhua
	He Xiangning

Cite this article:

Chen Yu,Zhou Yu,Luo Haoze等. Analytical 3D Temperature Field Model for Power Module Considering Temperature Effect of Semiconductor Voltage Drop[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2459-2470.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.201440 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I12/2459

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