SiC MOSFET串联短路动态特性

doi:10.19595/j.cnki.1000-6753.tces.201432

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Abstract

In power electronic systems, when SiC MOSFET is turned on incorrectly due to breakdown devices, hardware circuit defects or system control errors, at least two devices work in the short-circuit current loop, forming series short-circuit faults. Based on the half-bridge structure, the switching principle of SiC MOSFETs in short-circuit was introduced in detail. To study the influence mechanism of load current, gate drive voltage and junction temperature, the short circuit test was carried out under different experimental situations. The drain-source voltage sharing model of SiC MOSFET was derived and verified by simulation. The changes of short-circuit loss and junction temperature distribution caused by circuit parameters were compared on the 1 200V/80A SiC MOSFET experimental bench. The results show that the dynamic characteristics of SiC MOSFET are highly sensitive to circuit parameters in series short-circuit. The unbalanced dynamic change of drain-source voltage and drain current affect the short-circuit loss of devices, which in turn changes the junction temperature distribution.

Key words： SiC MOSFET series short-circuit voltage dividing characteristic junction tem- perature distribution

Received: 01 November 2020

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TM46

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	Articles by authors
	Zhang Jingwei
	Zhang Tian
	Feng Yuan
	Song Mingxuan
	Tan Guojun

Cite this article:

Zhang Jingwei,Zhang Tian,Feng Yuan等. Dynamic Characterization Assessment on Series Short-Circuit of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2446-2458.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.201432 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I12/2446

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