SiC电机驱动系统传导电磁干扰建模及预测

doi:10.19595/j.cnki.1000-6753.tces.191253

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Abstract In SiC power device based motor drive systems,due to high dv/dt and di/dt of SiC devices,non-ignorable oscillations are produced,thus the traditional conducted EMI circuit models are no longer suitable.In this paper,a new conducted EMI equivalent circuit modeling and prediction method of the SiC motor drive system is proposed.Firstly,a linear time-invariant equivalent circuit model of the SiC motor drive system was built by taking the effects of circuit parasitic parameters into account.It is proved that,to accurately predict the system conducted EMI level,both EMI produced by power device current and voltage as EMI sources must be calculated.Then,the differential-mode (DM) and common-mode (CM) EMI equivalent circuits were built.After that,each component equivalent circuit was built,and the parameters were calculated based on the tested motor drive system.Finally,EMI level at the power port was predicted based on the equivalent circuits.The calculation results were compared with the experimental results,which verified the built model.Moreover,it is proved that the proposed method improves the accuracy of DM EMI calculation in high frequency range.

Key words： SiC motor drive system electromagnetic interference (EMI) equivalent circuit model

Received: 27 September 2019

PACS:

TM921.51

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	Duan Zhuolin
	Zhang Dong
	Fan Tao

Cite this article:

Duan Zhuolin,Zhang Dong,Fan Tao. Modeling and Prediction of Electromagnetic Interference in SiC Motor Drive Systems[J]. Transactions of China Electrotechnical Society, 2020, 35(22): 4726-4738.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.191253 OR https://dgjsxb.ces-transaction.com/EN/Y2020/V35/I22/4726

[1] 钱照明,张军明,吕征宇,等.我国电力电子与电力传动面临的挑战与机遇[J].电工技术学报,2004,19(8):10-22.
Qian Zhaoming,Zhang Junming,LüZhengyu,et al.Challenge and opportunity for power electronics and electrical drive in China[J].Transactions of China Electrotechnical Society,2004,19(8):10-22.
[2] Liang Zhenxian,Ning Puqi,Wang F.Development of advanced all-SiC power modules[J].IEEE Transa- ctions on Power Electronics,2014,29(5):2289-2295.
[3] 朱义诚,赵争鸣,王旭东,等.SiC MOSFET与SiC SBD换流单元瞬态模型[J].电工技术学报,2017,32(12):58-69.
Zhu Yicheng,Zhao Zhengming,Wang Xudong,et al.Analytical transient model of commutation units with SiC MOSFET and SiC SBD pair[J].Transactions of China Electrotechnical Society,2017,32(12):58-69.
[4] 柯俊吉,赵志斌,谢宗奎,等.考虑寄生参数影响的碳化硅MOSFET开关暂态分析模型[J].电工技术学报,2018,33(8):1762-1774.
Ke Junji,Zhao Zhibin,Xie Zongkui,et al.Analytical switching transient model for silicon carbide MOSFET under the influence of parasitic parameters[J].Transa- ctions of China Electrotechnical Society,2018,33(8):1762-1774.
[5] 金淼鑫,高强,徐殿国.一种基于BJT的耐200℃高温碳化硅MOSFET驱动电路[J].电工技术学报,2018,33(6):1302-1311.
Jin Miaoxin,Gao Qiang,Xu Dianguo.A 200℃ silicon carbide MOSFET gate driving circuit based on bipolar junction transistor[J].Transactions of China Electrotechnical Society,2018,33(6):1302-1311.
[6] 王莉娜,邓洁,杨军一,等.Si和SiC功率器件结温提取技术现状及展望[J].电工技术学报,2019,34(4):703-716.
Wang Lina,Deng Jie,Yang Junyi,et al.Junction temperature extraction methods for Si and SiC power devices—a review and possible alternatives[J].Transactions of China Electrotechnical Society,2019,34(4):703-716.
[7] Ning Puqi,Li Lei,Wen Xuhui.A hybrid Si IGBT and SiC MOSFET module development[J].CES Transa- ctions on Electrical Machines and Systems,2017,1(4):360-366.
[8] Diao Shen,Chen Hong,Chen Yanhu,et al.Multi- dimensional models of SiC power MOSFET for accurately predicting the characteristics[J].CES Transactions on Electrical Machines and Systems,2017,1(3):300-305.
[9] 钱照明,陈恒林.电力电子装置电磁兼容研究最新进展[J].电工技术学报,2007,22(7):1-11.
Qian Zhaoming,Chen Henglin.State of art of electromagnetic compatibility research on power electronic equipment[J].Transactions of China Electrotechnical Society,2007,22(7):1-11.
[10] 郭磊磊,金楠,申永鹏.一种基于优化电压矢量选择的电压源逆变器模型预测共模电压抑制方法[J].电工技术学报,2018,33(6):1347-1355.
Guo Leilei,Jin Nan,Shen Yongpeng.A mode predictive common-mode voltage suppression method for voltage source inverter based on optimum voltage vector selection[J].Transactions of China Electro- technical Society,2018,33(6):1347-1355.
[11] 谢宗奎,柯俊吉,赵志斌,等.碳化硅MOSFET换流回路杂散电感提取方法的优化[J].电工技术学报,2018,33(21):4919-4927.
Xie Zongkui,Ke Junji,Zhao Zhibin,et al.Optimized extraction method of stray inductance in com- mutation path for silicon carbide MOSFET[J].Transactions of China Electrotechnical Society,2018,33(21):4919-4927.
[12] 李辉,黄樟坚,廖兴林,等.一种抑制SiC MOSFET桥臂串扰的改进门极驱动设计[J].电工技术学报,2019,34(2):275-285.
Li Hui,Huang Zhangjian,Liao Xinglin,et al.An improved SiC MOSFET gate driver design for crosstalk suppression in a phase-leg configuration[J].Transactions of China Electrotechnical Society,2019,34(2):275-285.
[13] 周志达,葛琼璇,赵鲁,等.碳化硅器件建模与杂散参数影响机理[J].电机与控制学报,2020,24(1):27-37.
Zhou Zhida,Ge Qiongxuan,Zhao Lu,et al.Modeling of SiC power device and study of nonlinear stray parameters impact[J].Electric Machines and Control,2020,24(1):27-37.
[14] 黄辉先,韩建超,刘湘宁,等.逆变器驱动电机系统共模电压抑制模型预测控制[J].电机与控制学报,2018,22(9):84-90.
Huang Huixian,Han Jianchao,Liu Xiangning,et al.Model predictive control to suppress common mode voltage of inverter drive motor system[J].Electric Machines and Control,2018,22(9):84-90.
[15] 李乐乐,李建成,王洪利,等.栅极低电压对关断瞬态的影响[J].电气技术,2018,19(11):10-14.
Li Lele,Li Jiancheng,Wang Hongli,et al.The effect of gate low voltage on the turn-off transients[J].Electrical Engineering,2018,19(11):10-14.
[16] Lai J S,Huang Xudong,Pepa E,et al.Inverter EMI modeling and simulation methodologies[J].IEEE Transactions on Power Electronics,2006,53(3):736-744.
[17] Ran Li,Gokani S,Clare J,et al.Conducted electro- magnetic emissions in induction motor drive systems- part I:time domain analysis and identification of dominant modes[J].IEEE Transactions on Power Electronics,1998,13(4):757-767.
[18] 沈卓轩,姜齐荣.电力系统电磁暂态仿真IGBT详细建模及应用[J].电力系统自动化,2020,44(2):235-248.
Shen Zhuoxuan,Jiang Qirong.Detailed IGBT mode- ling and applications of electromagnetic transient simulation in power system[J].Automation of Electric Power Systems,2020,44(2):235-248.
[19] Revol B,Roudet J,Schanen J L,et al.EMI study of three-phase inverter-fed motor drives[J].IEEE Transa- ctions on Industry Applications,2011,47(1):223-231.
[20] 孟进,马伟明,张磊,等.PWM变频驱动系统传导干扰的高频模型[J].中国电机工程学报,2008,28(15):141-146.
Meng Jin,Ma Weiming,Zhang Lei,et al.High frequency model of conducted EMI for PWM variable-speed drive systems[J].Proceedings of the CSEE,2008,28(15):141-146.
[21] 张栋,孔亮,宁圃奇,等.一种基于转移函数的电机驱动系统共模EMI滤波器设计方法[J].电工技术学报,2016,31(1):103-111.
Zhang Dong,Kong Liang,Ning Puqi,et al.A transfer-function-based design method of common- mode EMI filters in motor drive systems[J].Transa- ctions of China Electrotechnical Society,2016,31(1):103-111.
[22] 孟进,马伟明,张磊,等.考虑PWM调制策略的逆变器共模和差模干扰源模型[J].电工技术学报,2007,22(12):92-97.
Meng Jin,Ma Weiming,Zhang Lei,et al.DM and CM EMI sources modeling for inverters considering the PWM strategies[J].Transactions of China Electro- technical Society,2007,22(12):92-97.
[23] Huang Xudong,Lai J S,Pepa E.Analytical evalu- ation of modulation effect on three-phase inverter differential mode noise prediction[C]//Proceedings of the 19th Annual IEEE Applied Power Electronics Conference and Exposition,Anaheim,US,2004:681-687.
[24] Huang Xudong,Pepa E,Lai J S,et al.EMI chara- cterization with parasitic modeling for a permanent magnet motor drive[C]//38th IAS Annual Meeting on Conference Record of the Industry Applications Con- ference,Salt Lake City,UT,USA,2003:416-423.
[25] Wang Shuo,Kong Pengju,Lee F C.Common mode noise reduction for Boost converters using general balance technique[J].IEEE Transactions on Power Electronics,2007,22(4):1410-1416.
[26] Han Di,Sarlioglu B.Comprehensive study of the performance of SiC MOSFET-based automotive DC-DC converter under the influence of parasitic inductance[J].IEEE Transactions on Industry Appli- cations,2016,52(6):5100-5111.
[27] Ran Li,Gokani S,Clare J,et al.Conducted electro- magnetic emissions in induction motor drive systems.II.frequency domain models[J].IEEE Transactions on Power Electronics,1998,13(4):768-776.
[28] 王春雷,郑利兵,方化潮,等.IGBT模块的杂散参数计算与封装设计研究[J].智能电网,2015,3(4):328-332.
Wang Chunlei,Zheng Libing,Fang Huachao,et al.Stray parameters calculation and packaging design of IGBT modules[J].Smart Grid,2015,3(4):328-332.
[29] Dutta A,Ang S S.Electromagnetic interference simu- lations for wide-bandgap power electronic modules[J].IEEE Journal of Emerging and Selected Topics in Power Electronics,2016,4(3):757-766.
[30] Maekawa S,Tsuda J,Kuzumaki A,et al.EMI prediction method for SiC inverter by the modeling of structure and the accurate model of power device[C]//2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE ASIA),Hiroshima,Japan,2014:1929-1934.
[31] Liudmila S,Juha P,Francesco I,et al.Round busbar concept for 30nH,1.7kV,10kA IGBT non-destructive short-circuit tester[C]//2014 16th European Con- ference on Power Electronics and Applications,Lappeenranta,Finland,2014:1-9.
[32] Brown R W.Distributed circuit modeling of multi- layer capacitor parameters related to the metal film layer[J].IEEE Transactions on Components and Packaging Technologies,2007,30(4):764-773.
[33] Sun Jian,Xing Lei.Parameterization of three-phase electric machine models for EMI simulation[J].IEEE Transactions on Power Electronics,2014,29(1):36-41.
[34] Yang Yongming,Peng Hemeng,Wang Quandi.Com- mon model EMI prediction in motor drive system for electric vehicle application[J].Journal of Electrical Engineering &Technology,2015,10(1):205-215.
[35] 孟宪斌,王仲华,于志文.直流输电线路导线电感的计算[C]//中国电机工程学会2005输电线路进入城市电磁影响研讨会,深圳,中国,2005:144-151.
[36] Zhao Dongsheng,Ferreira J A,Polinder H,et al.Investigation of EMI noise transfer characteristic of variable speed drive system[C]//International Sympo- sium on Power Electronics,Electrical Drives,Automation and Motion,Taormina,Italy,2006:603-608.
[37] Wang Zijian,Wang Shuo,Kong Pengju,et al.DM EMI noise prediction for constant on-time,critical mode power factor correction converters[J].IEEE Transactions on Power Electronics,2012,27(7):3150-3157.