Abstract：The hybrid switch with paralleled Si IGBT and SiC MOSFET can break the limitations of single Si-based and SiC-based devices and effectively balance loss and cost. Junction temperature estimation is crucial for the reliable operation of Si/SiC hybrid switches. However, research on thermal monitoring often needs to meet two major conditions: thermal steady-state balance and measurable power loss. This paper proposes a coupling thermal parameter identification method for hybrid switches utilizing the thermal network partition equivalence concept. The accurate identification of the coupled thermal network parameters can be realized by only three case temperature cooling curves. Firstly, the thermal structure characteristics of Si/SiC hybrid switches are analyzed, and the challenge of high-order thermal constraints when the zero-input response method is directly applied to a hybrid switch is elaborated. Secondly, the thermal network partition of Si IGBT and SiC MOSFET is carried out to reduce the order of the model. According to Kirchhoff's law and node voltage equation, the Laplace expressions of Si IGBT and SiC MOSFET case temperatures are obtained. Thirdly, based on the mathematical relationship between the root and the coefficient, the constraint equations between the time constant of the case temperature cooling curve and the thermal parameters are constructed. By simultaneously solving the equations under the thermal network partition equivalence, all the remaining thermal parameters can be identified. Finally, the hybrid switch's coupling thermal parameter identification process is designed. In this process, the experimental steps of thermal time constant extraction are simple, greatly reducing the difficulty of solving the thermal constraint equations. Based on the experimental platform, the time constants of the cooling curves under two heat dissipation conditions are fitted, and all RC parameters can be solved by substituting the fitted time constants into the thermal constraint equations. Compared with the junction-to-case thermal resistance value tested by the IEC standard, the identification error of Si IGBT and SiC MOSFET in the proposed method is within 2%. In the transient junction temperature experiment, the experimental waveform is consistent with the junction temperature estimation waveform of the proposed method. The estimated and the measured junction temperatures are in good agreement on various time scales. The accuracy of the identified coupled thermal parameters relying on the thermal network partition equivalence is proved. The following conclusions can be drawn: (1) By heating a single chip to partition the coupled thermal network, the high-order thermal network is divided into two low-order equivalent thermal network models. The difficulty of thermal parameter identification with the zero-input response method is reduced. (2) The proposed method simplifies the power loss measurement steps and thermal equilibrium conditions. It has the advantages of simplicity, universality, and high process ability in coupled thermal parameter identification of parallel devices. (3) The idea of thermal network partition equivalence can be further extended to the parallel structure of three or more devices, which greatly improves the applicability of the zero-input response method in complex scenarios.
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