电工技术学报  2021, Vol. 36 Issue (4): 685-692    DOI: 10.19595/j.cnki.1000-6753.tces.201296
生物电工技术专题 |
重复经颅磁刺激对认知功能的作用及其分子机理的研究进展
尚莹春, 张涛
南开大学生命科学学院 生物活性材料教育部重点实验室 天津 300071
The Role of Repetitive Transcranial Magnetic Stimulation on Cognitive Function and Its Underlying Molecular Mechanism
Shang Yingchun, Zhang Tao
College of Life Sciences and Key Laboratory of Bioactive Materials Ministry of Education Nankai University Tianjin 300071 China
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摘要 重复经颅磁刺激(rTMS)作为一种非侵入性的物理干预手段,其原理是利用交变磁场在一个局部脑区产生感应电流。目前rTMS已经成为一种选择性改变神经元电活动的方法,并广泛应用于精神类和神经类疾病的临床辅助治疗。认知功能障碍是许多大脑疾病的核心症状,是影响患者生存质量的主要因素。rTMS能够显著改善患者大脑的神经功能网络,有望成为一种改善认知功能障碍的治疗方法。该文主要针对rTMS对正常生理状态以及在精神类疾病、神经类疾病和其他疾病导致的认知功能障碍中作用及其潜在分子机理进行综述。
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尚莹春
张涛
关键词 重复经颅磁刺激认知功能突触可塑性脑源性神经营养因子    
Abstract:Repetitive transcranial magnetic stimulation (rTMS), a noninvasive physical therapy that applies an alternating magnetic field to induce electrical currents in a local brain region, has been proposed as an approach for selectively altering neural activity, and is widely used in the clinical treatment of psychiatry and neurology. Cognitive dysfunction is the core symptom of many brain diseases and the major factor affecting patients' quality of life. rTMS can significantly improve patients' neural networks and is expected to be a treatment method for improving cognitive dysfunction. This paper mainly reviews the role of rTMS in normal physiological states and cognitive dysfunction caused by psychiatry, neurology and other diseases, as well as its underlying molecular mechanism.
Key wordsRepetitive transcranial magnetic stimulation    cognitive function    synaptic plasticity    brain-derived neurotrophic factor   
收稿日期: 2020-09-27     
PACS: Q64  
基金资助:国家自然科学基金(32070988, 31771148)和天津市自然科学基金(18JCYBJC27400)资助项目
通讯作者: 张 涛 男,1957年生,教授,博士生导师,研究方向为神经生物学。E-mail: zhangtao@nankai.edu.cn   
作者简介: 尚莹春 女,1992年生,博士,研究方向为神经生物学。E-mail: shangyingchun@mail.nankai.edu.cn
引用本文:   
尚莹春, 张涛. 重复经颅磁刺激对认知功能的作用及其分子机理的研究进展[J]. 电工技术学报, 2021, 36(4): 685-692. Shang Yingchun, Zhang Tao. The Role of Repetitive Transcranial Magnetic Stimulation on Cognitive Function and Its Underlying Molecular Mechanism. Transactions of China Electrotechnical Society, 2021, 36(4): 685-692.
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