Abstract：Forthe transient overvoltage and oscillation phenomena in a solid-state DC circuit breaker based on silicon carbide metal oxide semiconductor field-effect transistor (SiC-MOSFET)caused by its high switching-off speed, a possible solution method wasproposed in this paper. First, an equivalent circuit model for SiC MOSFET was established, and the impact of different stray inductances on theturn-off initial stage voltage waveforms of theDCcircuitbreakerwas analyzed. And then, according tothe difference in energy absorbedby metal oxygen varistors(MOVs) with different rated voltage levels, a voltage overshoot suppression method was presented,in which another MOV was used as a snubber circuit. Furthermore, on the basis of its operation principle and suppressive effects, a basicprinciple was presented on how to select the snubber MOV. Finally,an experimental platform of SiC MOSFET-based DC circuit breaker was established, switching off characteristics were analyzed and compared at different stray inductances and different solid-state devices. The experimental results show thattheSiC MOSFET-based DCcircuit breaker hasrelatively serious voltage overshoot and oscillation comparedwith Si IGBT-based breaker, whichis more obvious with increasing stray inductance. And the feasibility of proposed method is also verified.
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2018, Vol. 33 
