双断口真空断路器高频涌流预击穿特性实验

doi:10.19595/j.cnki.1000-6753.tces.250999

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摘要投切电容器组是一种经济高效的无功补偿手段。真空断路器因其优异的灭弧性能和免维护特性,被广泛应用于电容器组的频繁投切。然而,关合过程中的高频高幅值涌流易引发触头烧蚀,影响断路器的性能与寿命。相控关合技术可有效抑制合闸涌流,但其抑制效果高度依赖断路器的预击穿特性,尤其在双断口结构中,相关研究仍相对薄弱。该文围绕双断口真空断路器在高频涌流条件下的预击穿特性开展系统研究。搭建实验平台,对采用杯状纵磁（AMF）触头和“卍”字形横磁（TMF）触头的两种单断口断路器及四种双断口结构进行实验,分析不同结构下的预击穿特性及涌流对触头表面烧蚀的影响。实验结果表明,TMF-TMF型双断口结构表现最优,显著降低了预击穿平均开距d₅₀（57.9%）、分散性（71.4%）、涌流截断时间（85.1%）、燃弧时间（61.5%）以及触头烧蚀程度（53.2%）。“卍”字形横磁触头通过在触头间形成横向磁场,引导电弧在表面旋转运动,有效分散电弧能量,显著减轻烧蚀。该研究为双断口真空断路器在容性负载相控投切中的结构优化与工程应用提供了理论支撑和实验依据。

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关键词 ：电容器组投切, 相控关合技术, 双断口真空断路器, 预击穿特性, 触头结构

Abstract：Switching capacitor banks represent a critical and economical method for reactive power compensation in modern power systems. Vacuum circuit breakers (VCBs), valued for their superior arc-extinguishing capability and maintenance-free operation, are extensively deployed for frequent capacitor switching. However, the high-frequency, high-amplitude inrush current generated during capacitive closing operations induces severe contact erosion, compromising breaker performance and longevity. Phase-controlled closing technology offers a potential solution for inrush current suppression, but its effectiveness depends critically on the VCB's prestrike characteristics. This dependency is particularly complex and underexplored in double-break VCB configurations, where two interrupters are connected in series to enhance voltage-withstand capability and capacitive-current interruption performance. This paper presents a systematic experimental investigation of the high-frequency inrush-current prestrike characteristics of double-break VCBs, specifically the cup-type axial magnetic-field (AMF) and spiral-type transverse magnetic-field (TMF) contacts.
An experimental platform was constructed to generate a characteristic damped oscillatory inrush current (peak: 5 kA or 20 kA; frequency: 4 250 Hz). Tests were conducted on two single-break configurations (VL_S1_A: AMF; VL_S2_T: TMF) and four double-break structures, i.e., AMF-AMF (VL_D1), AMF-TMF (VL_D2), TMF-AMF (VL_D3), and TMF-TMF (VL_D4). Each configuration underwent 80 closing operations. Key parameters measured included prestrike gap (d_pre) and its statistical dispersion (σ_pre), inrush current interruption patterns, interruption time (t_int), prestrike arcing time (t_a), voltage distribution across breaks (V_Hpre, V_Lpre), prestrike field strength (E_pre), and post-test contact surface field enhancement factor (β) derived from Fowler-Nordheim analysis to quantify erosion. High-speed imaging captured arc behavior, and ANSYS/Maxwell 3D simulations analyzed magnetic field distributions.
Results demonstrate significant structural dependencies. Under 5 kA inrush conditions, the TMF single- break outperformed AMF, reducing the median prestrike gap (d₅₀) by 47.4% (1.0 mm vs. 1.9 mm) and dispersion (σ_pre) by 28.6% (0.5 mm vs. 0.7 mm). The double-break configuration further improved performance. The TMF-TMF structure exhibits the most substantial enhancements: d₅₀ reduced by 57.9% compared to AMF-AMF, dispersion by 71.4%, median interruption time (t_int50) by 85.1% (0.10 ms vs. 0.67 ms for AMF single-break), and median arcing time (t_a50) by 61.5% (0.30 ms vs. 0.78 ms for TMF-AMF). Voltage distribution analysis revealed that double-break structures with TMF contacts on the high-voltage side (TMF-AMF, TMF-TMF) promoted more balanced voltage sharing (approaching 64 for TMF-TMF) compared with AMF-dominated structures (e.g., 73 for AMF-AMF), reducing the probability of high-voltage-side prestrike initiation. Crucially, TMF contacts consistently exhibited superior resistance to surface erosion, and the growth rate K of the post-test field enhancement factor β was lowered (K≈2.2~3.0 for TMF-TMF contacts vs. 3.9~5.3 for AMF-AMF and up to 6.3 under 20 kA). Surface morphology inspection confirmed more severe localized melting pits in AMF slots than multiple shallow pits on TMF surfaces. This erosion mitigation in TMF structures is attributed to the transverse magnetic field, which generates a Lorentz force that drives high-speed arc rotation across the contact surface (simulations showed B_max~44.63 mT at 4 250 Hz, with a Lorentz force of ~92.2 mN), thereby dispersing energy and preventing localized overheating. Conversely, AMF structures, despite promoting diffuse arcs, suffered from localized field enhancement due to slot geometry and less effective energy dispersal during the brief prestrike phase. Increasing the inrush peak to 20 kA markedly amplified instability and damage: d₅₀ increased substantially (~3.5 mm for AMF-AMF), t_int patterns shifted towards single long-duration arcing events (Type 1 probability rose to 76%), and β growth rates surged (K=6.3 for HV side AMF), indicating severe micro-protrusion formation and erosion.
In conclusion, this paper quantifies the superior prestrike performance and contact-erosion resistance of double-break VCBs employing spiral TMF contacts. The TMF's ability to rotate the prestrike arc via a strong transverse magnetic field can minimize the localized energy density and promote the balanced voltage distribution in series breaks. This paper provides a reference for design optimization and reliable implementation of double-break VCBs in high-precision phase-controlled switching applications.

Key words： Capacitor banks switching phase-controlled switching technology double-break vacuum circuit breaker prestrike characteristics contact structure

收稿日期: 2025-06-09

PACS:

TM561.2

基金资助:国家自然科学基金重点资助项目（51937009）

通讯作者: 姚晓飞男,1985年生,博士,副研究员,研究方向为快速真空断路器。E-mail: yaoxf85@mail.xjtu.edu.cn

作者简介: 耿云女,1990年生,博士,讲师,研究方向为真空断路器无功投切。E-mail: gengyun@xaut.edu.cn

引用本文:

耿云, 姚晓飞, 许闽榉, 耿英三, 刘志远. 双断口真空断路器高频涌流预击穿特性实验[J]. 电工技术学报, 2026, 41(10): 3536-3549. Geng Yun, Yao Xiaofei, Xu Minju, Geng Yingsan, Liu Zhiyuan. High-Frequency Inrush Current Prestrike Characteristics of Double-Break Vacuum Circuit Breakers. Transactions of China Electrotechnical Society, 2026, 41(10): 3536-3549.

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