Abstract：SiC PiN diode is known as an ideal high voltage rectifier in power electronics. Base on extensive numerical simulations on epi-layer parameters and termination structures, an optimized device design is put forward. With a 50μm thick drift layer and 1.5×1015cm-3 N-type doping concentration, the fabricated PiN rectifier presents a high blocking voltage of 4 700V with both low leakage current and superior conduction capability. At the current conduction density of 100A/cm2, the minimum on-state voltage of fabricated device is 3.6V.
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2015, Vol. 30 
