Abstract：An accurate model for SiC MOSFET devices is crucial for precise circuit design and analysis. Many existing SiC MOSFET models neglect temperature effects, leadingto substantial discrepancies in voltage and current measurements across different temperatures. Although some manufacturers offer proprietary models, these are often oversimplified and may exhibit significant deviations from actual SiC MOSFET performance. To address this, this paper develops a comprehensive SiC MOSFET switching transient model covering a wide temperature range, which accurately describes the transient process of SiC MOSFET switching at different temperatures. Additionally, for some complex processes, mathematical fitting of waveforms is employed to simplify the modeling process. During the switching process of SiC MOSFETs, internal device parameters fluctuate with temperature, directly impacting transient behavior. Accurately characterizing these parameters at various temperatures is crucial for effective device modeling. The parasitic capacitance of SiC MOSFETs is analyzed in this paper, and a target function for parasitic capacitance is derived using mathematical techniques. To mitigate significant deviations in transfer characteristics at different temperatures, the traditional transfer characteristics curve fitting function is enhanced by incorporating a temperature variable through polynomial fitting. The transconductance is the slope of the tangent line of the transfer characteristic curve. In this article, the transconductance is calculated based on the transfer characteristic curve, which also obtains the relationship between transconductance and temperature. Meanwhile, the threshold voltage of SiC MOSFET is affected by temperature, and the relationship between threshold voltage and temperature also affects the transient process of the switch. This article uses linear fitting to represent the expression between temperature and threshold voltage based on the information provided in the data sheet. These model parameters are incorporated into the SiC MOSFET switching transient model, integrating temperature effects into the SiC model. The switching process is divided into multiple stages for piecewise modeling, based on the equivalent circuit and physical mechanisms of the transient process. Analysis focuses on drain-source voltage, drain-source current, and switching time, with corresponding expressions established. Behavioral modeling is used for complex stages of switch transients, simplifying the process of switch transient modeling. At the same time, the model parameters are related to the real circuit, ensuring accuracy. This method can balance computational efficiency and accuracy. Build a dual pulse testing platform to conduct dual pulse experiments on Infineon's silicon carbide device IMZA120R040M1H at different temperatures (25℃ to 125℃). The comparison between model predictions and experimental results shows good consistency, verifying the accuracy of the model. In summary, the following conclusions are drawn: (1) The enhanced transfer characteristics fitting method, incorporating temperature effects, achieves a fitting goodness of 0.99, improving curve accuracy. (2) The proposed SiC MOSFET switching transient model exhibits an average error of less than 10% in switching time and approximately 12% in switching loss compared to experimental data. (3) The improved model, accounting for temperature effects, enhances both the accuracy and applicability of the SiC MOSFET model.
姜杰俊, 刘青, 韩伟健, 辛振. 宽温域下的SiC MOSFET开关暂态建模方法研究[J]. 电工技术学报, 2025, 40(20): 6591-6603.
Jiang Jiejun, Liu Qing, Han Weijian, Xin Zhen. Research on Switching Transient Modeling Method of SiC MOSFET in Wide Temperature Range. Transactions of China Electrotechnical Society, 2025, 40(20): 6591-6603.
[1] 王来利, 赵成, 张彤宇, 等. 碳化硅功率模块封装技术综述[J]. 电工技术学报, 2023, 38(18): 4947-4962. Wang Laili, Zhao Cheng, Zhang Tongyu, et al.Review of packaging technology for silicon carbide power modules[J]. Transactions of China Electrotechnical Society, 2023, 38(18): 4947-4962. [2] 邹铭锐, 曾正, 孙鹏, 等. 基于变电阻驱动的SiC器件开关轨迹协同调控[J]. 电工技术学报, 2023, 38(16): 4286-4300. Zou Mingrui, Zeng Zheng, Sun Peng, et al.Coordinated switching trajectory regulation of SiC device using variable resistance gate driver[J]. Transactions of China Electrotechnical Society, 2023, 38(16): 4286-4300. [3] 李思, 杨明, 马宇, 等. 新型并联谐振直流环节软开关逆变器改进调制策略[J]. 电工技术学报, 2024, 39(2): 487-500. Li Si, Yang Ming, Ma Yu, et al.Improved modulation strategy of novel parallel resonant DC link soft- switching inverter[J]. Transactions of China Electro- technical Society, 2024, 39(2): 487-500. [4] 任鹏, 涂春鸣, 侯玉超, 等. 考虑异质器件混用与输出电平倍增的混合型MMC及其调控方法[J]. 电力系统自动化, 2024, 48(5): 128-136. Ren Peng, Tu Chunming, Hou Yuchao, et al.Hybrid modular multilevel converter considering heterogeneous device mixing and output level doubling and its regulation method[J]. Automation of Electric Power Systems, 2024, 48(5): 128-136. [5] 谭亚雄, 张梦洋, 刘元, 等. 一种连续函数描述的高精度SiC MOSFET模型[J]. 电工技术学报, 2024, 39(18): 5719-5731. Tan Yaxiong, Zhang Mengyang, Liu Yuan, et al.A highprecision SiC MOSFET model with continuous function description[J]. Transactions of China Electro- technical Society, 2024, 39(18): 5719-5731. [6] 任鹏, 涂春鸣, 侯玉超, 等. 基于Si和SiC器件的混合型级联多电平变换器及其调控优化方法[J]. 电工技术学报, 2023, 38(18): 5017-5028. Ren Peng, Tu Chunming, Hou Yuchao, et al.Research on a hybrid cascaded multilevel converter based on Si and SiC device and its control optimization method[J]. Transactions of China Electrotechnical Society, 2023, 38(18): 5017-5028. [7] 李华康, 宁圃奇, 康玉慧, 等. SiC MOSFET器件高温下最大电流导通能力评估方法[J]. 电源学报, 2024, 22(2): 386-395. Li Huakang, Ning Puqi, Kang Yuhui, et, al. Evaluation method for maximum current conduction capability of SiC MOSFET device at high temperature[J]. Journal of Power Supply, 2024, 22(2): 386-395. [8] Christen D, Biela J.Analytical switching loss modeling based on datasheet parameters for MOSFETs in a half- bridge[J]. IEEE Transactions on Power Electronics, 2019, 34(4): 3700-3710. [9] Dong Zezheng, Wu Xinke, Xu Hongyi, et al.Accurate analytical switching-on loss model of SiC MOSFET considering dynamic transfer characteristic and Qgd[J]. IEEE Transactions on Power Electronics, 2020, 35(11): 12264-12273. [10] Ren Yuancheng, Xu Ming, Zhou Jinghai, et al.Analytical loss model of power MOSFET[J]. IEEE Transactions on Power Electronics, 2006, 21(2): 310-319. [11] Castro I, Roig J, Gelagaev R, et al.Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC-DC power converters[J]. IEEE Transactions on Power Electronics, 2016, 31(3): 2485-2495. [12] Rødal G L, Peftitsis D.Real-time FPGA simulation of high-voltage silicon carbide MOSFETs[J]. IEEE Trans- actions on Power Electronics, 2023, 38(3): 3213-3234. [13] 贠团庆, 杨芳, 刘伟景, 等. 一种包含物理效应的SiC MOSFET行为模型[J]. 电力电子技术, 2024, 58(1): 118-120.124. Yuan Tuanqing, Yang Fang, Liu Weijing, et, al. A SiC MOSFET behavior model including physical effects[J]. Power Electronics, 2024, 58(1): 118-120, 124. [14] Li Ruqi, Zhu Qiuhua, Xie Manjing.A new analytical model for predicting dv/dt-induced low-side MOSFET false turn-ON in synchronous Buck converters[J]. IEEE Transactions on Power Electronics, 2019, 34(6): 5500-5512. [15] 朱义诚, 赵争鸣, 王旭东, 等. SiC MOSFET与SiC SBD换流单元瞬态模型[J]. 电工技术学报, 2017, 32(12): 58-69. Zhu Yicheng, Zhao Zhengming, Wang Xudong, et al.Analytical transient model of commutation units with SiC MOSFET and SiC SBD pair[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 58-69. [16] Ahmed M R, Todd R, Forsyth A J.Predicting SiC MOSFET behavior under hard-switching, soft-switching, and false turn-on conditions[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11): 9001-9011. [17] Qian Cheng, Wang Zhiqiang, Xin Guoqing, et al.Datasheet driven switching loss, turn-on/off over- voltage, di/dt, and dv/dt prediction method for SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2022, 37(8): 9551-9570. [18] Jin Miaoxin, Gao Qiang, Wang Yijie, et al.A temperature- dependent SiC MOSFET modeling method based on MATLAB/Simulink[J]. IEEE Access, 2017, 6: 4497-4505. [19] Yin Shan, Wang Tao, Tseng K J, et al.Electro- thermal modeling of SiC power devices for circuit simulation[C]//IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society, Vienna, Austria, 2013: 718-723. [20] Li Jianfeng, Castellazzi A, Eleffendi M A, et al.A physical RC network model for electrothermal analysis of a multichip SiC power module[J]. IEEE Trans- actions on Power Electronics, 2018, 33(3): 2494-2508. [21] 李辉. 基于器件跨导的SiC MOSFET结温评估方法研究[D]. 桂林: 桂林电子科技大学, 2023. Li Hui.Research on junction temperature evaluation method of SiC MOSFET based on device trans- conductance[D]. Guilin: Guilin University of Electronic Technology, 2023. [22] Sun Jianning, Yuan Liqiang, Duan Renzhi, et al.A semiphysical semibehavioral analytical model for switching transient process of SiC MOSFET module[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021, 9(2): 2258-2270. [23] Gao Jian.R-squared (R2) -How much variation is explained?[J]. Research Methods in Medicine & Health Sciences, 2024, 5(4): 104-109. [24] Li Hui, Liao Xinglin, Hu Yaogang, et al.Analysis of voltage variation in silicon carbide MOSFETs during turn-on and turn-off[J]. Energies, 2017, 10(10): 1456. [25] Eskandari S, Peng Kang, Tian Bo, et al.Accurate analytical switching loss model for high voltage SiC MOSFETs includes parasitics and body diode reverse recovery effects[C]//2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA, 2018: 1867-1874.
2025, Vol. 40 
