Transactions of China Electrotechnical Society  2021, Vol. 36 Issue (zk1): 200-208    DOI: 10.19595/j.cnki.1000-6753.tces.L90141
Current Issue| Next Issue| Archive| Adv Search |
An Improved IGBT Behavioral Model of Voltage Source Converter Based on HVDC
Song Pengcheng, Zhang Li, Zou Liang, Zhao Tong, Sun Youliang
School of Electrical Engineering Shandong University Jinan 250061 China

Download: PDF (1374 KB)   HTML (1 KB) 
Export: BibTeX | EndNote (RIS)      
Abstract  In voltage source converter based high voltage direct current (VSC-HVDC) converter station, the switching transient process of insulated gate bipolar transistor (IGBT) in the converter valve is one of the principal reasons for electromagnetic interference. The high-frequency electromagnetic interference will adversely affect the normal operation of key equipment in the converter station. At present, the behavioral model is widely used in the switching transient process modeling of IGBT. Although this model has significant advantages in terms of simulation speed and universality, it has some disadvantages such as low simulation accuracy. Given the shortcomings of the existing models, this paper proposes an improved behavioral model based on the vector fitting method. The vector fitting method, which is an efficient and stable rational function fitting method, is used to fit the waveforms of low simulation accuracy in the behavioral model, and the fitted formula is transformed into the form of equivalent circuit in the time domain. Then the equivalent circuit model is combined with the traditional behavioral model to obtain the more accurate IGBT transient model. Finally, this paper builds the improved behavioral model in simulation software, and conducts comparison and error analysis between the simulation waveforms and the experimental waveforms. The results show that the simulation accuracy of the proposed model is greatly improved compared with the traditional model.
Key wordsVoltage source converter based on high voltage DC (VSC-HVDC)      insulated gate bipolar transistor (IGBT)      vector fitting      behavioral model     
Received: 30 June 2020     
PACS: TM564  
Service
E-mail this article
Add to my bookshelf
Add to citation manager
E-mail Alert
RSS
Articles by authors
Song Pengcheng
Zhang Li
Zou Liang
Zhao Tong
Sun Youliang
Cite this article:   
Song Pengcheng,Zhang Li,Zou Liang等. An Improved IGBT Behavioral Model of Voltage Source Converter Based on HVDC[J]. Transactions of China Electrotechnical Society, 2021, 36(zk1): 200-208.
URL:  
https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90141     OR     https://dgjsxb.ces-transaction.com/EN/Y2021/V36/Izk1/200
Copyright © Transactions of China Electrotechnical Society
Supported by: Beijing Magtech