压接型IGBT器件单芯片子模组疲劳失效的仿真

doi:10.19595/j.cnki.1000-6753.tces.170875

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Abstract

Due to the advantages of double heat dissipation, short circuit failure and easy series connection, press-pack IGBTs (Insulated gate bipolar transistor) are particularly suitable for application in flexible HVDC high power field. However, after a long period of cyclic thermal stress, the fatigue failure occurs in the metal material of each component because of its pressure contact package structure, which adversely affects device reliability. In this paper, the finite element simulation model of Press-Pack IGBTs was established, the power cycling simulation was used to simulate the thermal stress condition of the working process, and the thermal-mechanical results were analyzed. The fatigue life prediction of IGBT chip was carried out using Coffin-Mason and Basquin model. The results show that the edge region of the chip surface that contacting the emitter molybdenum is the pressure and deformation concentration region, and the fatigue life of the chip is only 10 000 cycles in high stress condition. A pressure failure mode of Press-Pack IGBTs was proposed, and the failure mechanisms were preliminarily explained using the actual failure chips and simulation results.

Key words： Press-pack IGBTs single chip submodule power cycling fatigue life prediction chip failure

Received: 19 June 2017 Published: 26 September 2018

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TN303

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	Articles by authors
	Zhang Jingwei
	Deng Erping
	Zhao Zhibin
	Li Jinyuan
	Huang Yongzhang

Cite this article:

Zhang Jingwei,Deng Erping,Zhao Zhibin等. Simulation on Fatigue Failure of Single IGBT Chip Module of Press-Pack IGBTs[J]. Transactions of China Electrotechnical Society, 2018, 33(18): 4277-4285.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.170875 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I18/4277

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