具有高阈值电压和超低栅漏电的400V常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

doi:10.19595/j.cnki.1000-6753.tces.160678

Abstract
Figure/Table
References (14)
Related Citation (6)

Download: PDF (16387 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract

We report normally-off operation of an AlGaN/GaN recessed MOS-gate high electron mobility transistor (MOS-gate HEMT) on Si (111) substrate fabricated with the inductively coupled plasma (ICP) recessed technique. By employing a 40nm thick Al₂O₃ gate dielectric deposited by atomic layer deposition (ALD), the AlGaN/GaN HEMT with a gate length of 2 μm and a gate width of 10.35 mm exhibits a high threshold voltage of + 4.3 V, a specific on-resistance of 5.73 mΩ·cm² and a saturation drain current of 0.71 A. When the gate bias (V_gs) is 0V, the breakdown voltage (BV) of the AlGaN/GaN HEMT is 400 V and the drain to source leakage current is below 320 μA with a gate-drain distance of 10μm. The on/off drain current ratio (I_ON/I_OFF) is over 10⁹. Under a negative gate bias (V_gs) of - 20V, the gate to source leakage current is as low as 1.8 nA. Under a positive gate bias (V_gs) of +12 V, the gate to source leakage current is only 1.6 μA. The high I_ON/I_OFF ratio and low gate to source leakage both indicate high quality of the Al₂O₃/GaN interface.

Key words： AlGaN/GaN high threshold voltage large gate swing normally-off

Received: 12 September 2019 Published: 12 April 2018

PACS:	TM23
	TN3
	TN4
	TN5

Fund:

This work is supported by the National High Technology Research and Development Program of China(No.2014 AA 032606)and the National Natural Sciences Foundation of China(No.61376090,61306008).

About author:: Zhao Yongbing, male, born in 1988, he is currently working toward the Ph.D degree at Institute of Semiconductors, Chinese Academy of Sciences. His research interests include GaN power devices and GaN optoelectronic devices.E-mail: zhyb0515@163.com;This work is supported by the National High Technology Research and Development Program of China(No.2014 AA 032606)and the National Natural Sciences Foundation of China(No.61376090,61306008).Zhang Yun, male, born in 1982, he is currently working at Institute of Semiconductors, Chinese Academy of Sciences, as a professor in physics of semiconductor devices. His research interests include GaN power devices and GaN optoelectronic devices.E-mail: yzhang34@semi.ac.cn(Corresponding author)

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	Zhao Yongbing
	Cheng Zhe
	Zhang Yun
	Yi Xiaoyan
	Wang Guohong

Cite this article:

Zhao Yongbing,Cheng Zhe,Zhang Yun等. 400V Normally-off Recessed MOS-Gate AlGaN/GaN HEMT with High Threshold Voltage and Ultra-Low Gate-Leakage Current[J]. Transactions of China Electrotechnical Society, 2018, 33(7): 1472-1477.

URL:

https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.160678 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I7/1472

[1] Nariaki I, Yuki N, Hiroshi K.GaN power transistors on Si substrate for switching applications[J]. Proceedings of the IEEE, 2010, 98(7): 1151-1161.
[2] Paul C T, Ritu T.Wide bandgap compound semiconductors for superior high-voltage unipolar power devices[J]. IEEE Transactions on Electron Devices, 1994, 41(8): 1481-1483.
[3] Malay T, Krishna S.Performance evaluation of high-power wide band-gap semiconductor rectifiers[J]. Journal of Applied Physics, 1999, 85(9): 6889-6897.
[4] 任小永, David Reusch, 季澍, 等. 氮化镓功率晶体管三电平驱动技术[J]. 电工技术学报, 2013, 28(5): 202-207.
Ren Xiaoyong, David Reusch, Ji Shu, et al.Three-level driving method for GaN power transistor[J]. Transactions of China Electrotechnical Society, 2013, 28(5): 202-207.
[5] 李艳, 张雅静, 黄波, 等. Cascode型GaN HEMT输出伏安特性及其在单相逆变器中的应用研究[J]. 电工技术学报, 2015, 30(14): 295-303.
Li Yan, Zhang Yajing, Trillion Q.Zheng, et al. Research on output volt-ampere characteristics of cascode GaN HEMT and its application in single-phase inverter[J]. Transactions of China Electrotechnical Society, 2015, 30(14): 295-303.
[6] Wataru S, Yoshiharu T, Masahiko K.Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications[J]. IEEE Transactions on Electron Devices, 2006, 53(2) : 356-362.
[7] Takashi M, Hiroyuki Y, Shigeru K.Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer[J]. Journal of Applied Physics, 2013, 113(3): 369-372.
[8] Cai Yong, Zhou Yugang, Chen K J.High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment[J]. IEEE Electron Device Letters, 2005, 26(7): 435-437.
[9] Asif K M, Grigory S, Yang Jinwei.Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications[J]. IEEE Transactions on Microwave Theory and Techniques, 2003, 51(2): 624-633.
[10] Tamotsu H, Shinya O, Hideki H.Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field effect transistors using ultrathin Al₂O₃ dielectric[J]. Applied Physics Letters, 2003, 83(14): 2952-2954.
[11] Asif K, Hu X, Sumin G.AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor[J]. IEEE Electron Device Letters, 2000, 21(2): 63-65.
[12] Yang Shu, Tang Zhikai, Wong Yuen.High-quality interface in Al₂O₃/GaN/GaN/ AlGaN/GaN MIS structures with in situ pre-gate plasma nitridation[J]. IEEE Electron Device Letters, 2013, 34(12): 1497-1499.
[13] Tang Zhikai, Jiang Qimeng, Lu Yunyou.600-V normally off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse[J]. IEEE Electron Device Letters, 2013, 34(11): 1373-1375.
[14] Hu X, Koudymov A, Simin G.Si₃N₄/AlGaN/ GaN-metal-insulator-semiconductor heterostructure field-effect transistors[J]. Applied Physics Letters, 2001, 79(17): 2832-2834.