高频谐振逆变器的功率MOS管驱动电路

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Abstract Power MOSFET operations in softing switching in the load resonant bridge inverter, as the switching frequency is up to MHz, the gate driver is needed to meet the requirements of higer driver current, faster switching, lower speed, less driver loss. After the analysis and comparison to the conventional gate driver and the existing resonant one, the paper presents a new discontinuous current source gate driver for power MOSFET in the HF resonant bridge inverter, and the work processing of the new driver was addressed in detail. The principle analysis and experimental results verify that the values of charging and discharging of power MOSFET are almost constant, significant reduction of the switching transition time and switching loss. The inductance current is discontinuous, decrease the conduction loss; to use anti-diodes path to create a negative gate voltage during turn-off transition, further reduced switching time and the turn-off loss; the stored energy in the inductor is returned to the drive voltage source. The benefit of the gate energy recovery capability is that higher gate drive voltage can be used to further reduce the conduction loss.

Key words： HF resonant inverter gate driver driver losses switching speed

Received: 02 November 2010 Published: 07 March 2014

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TM464

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	Liu Jiaomin
	Li Jianwen
	Cui Yulong
	Han Ming

Cite this article:

Liu Jiaomin,Li Jianwen,Cui Yulong等. Power MOSFET Gate Driver of the High Frequency Resonant Inverter[J]. Transactions of China Electrotechnical Society, 2011, 26(5): 113-118.

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http://dgjsxb.ces-transaction.com/EN/ OR http://dgjsxb.ces-transaction.com/EN/Y2011/V26/I5/113

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